A3G26H502W17S|2496-2690 MHz, 80 W Avg, 48 V | NXP Semiconductors

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2496-2690 MHz, 80 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G26H502W17S
生産終了 (EOL)

This A3G26H502W17S 80 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside these frequencies.

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Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHs compliant

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQA = 370 mA, VGSB = -4.6 Vdc, Pout = 80 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
2496 MHz14.448.47.8-32.6
2590 MHz15.049.38.2-35.2
2690 MHz14.851.27.8-34.0
1. All data measured in fixture with device soldered to heatsink.

購入/パラメータ

1 結果

除外 1 NRND

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コンピュータ支援設計 モデル

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Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

ダイ技術

A3G26H502W17S
データ・シート

生産終了 (EOL)

2496

2690

48

57

500

GaN

N true 0 PSPA3G26H502W17Sja 2 アプリケーション・ノート Application Note t789 1 データ・シート Data Sheet t520 1 ja ja ja データ・シート Data Sheet 1 1 1 English A3G26H502W17S 2496-2690 MHz, 80 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations 1607022695794699030517 PSP 349.3 KB None None documents None 1607022695794699030517 /docs/en/data-sheet/A3G26H502W17S.pdf 349302 /docs/en/data-sheet/A3G26H502W17S.pdf A3G26H502W17S documents N N 2020-12-03 A3G26H502W17S 2496-2690 MHz, 80 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3G26H502W17S.pdf /docs/en/data-sheet/A3G26H502W17S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jan 20, 2021 980000996212993340 Data Sheet Y N A3G26H502W17S 2496-2690 MHz, 80 W Avg, 48 V Data Sheet アプリケーション・ノート Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages false 0 A3G26H502W17S downloads ja true 1 Y PSP Y Y アプリケーション・ノート 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 データ・シート 1 /docs/en/data-sheet/A3G26H502W17S.pdf 2020-12-03 1607022695794699030517 PSP 1 Jan 20, 2021 Data Sheet A3G26H502W17S 2496-2690 MHz, 80 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A3G26H502W17S.pdf English documents 349302 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3G26H502W17S.pdf A3G26H502W17S 2496-2690 MHz, 80 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3G26H502W17S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A3G26H502W17S 2496-2690 MHz, 80 W Avg, 48 V Data Sheet 349.3 KB A3G26H502W17S N 1607022695794699030517 true Y Products

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