1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors
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These high ruggedness devices, MMRF1306HR5 and MMRF1306HSR5, are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications. They are unmatched input and output designs allowing wide frequency utilization from 1.8 to 600 MHz.
製品詳細
Features
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Device can be used Single-Ended or in a Push-Pull Configuration
- Qualified Up to a Maximum of 50 VDD Operation
- Characterized from 30 V to 50 V for Extended Power Range
- Suitable for Linear Application with Appropriate Biasing
- Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
RF Performance Tables
Typical Performance
VDD = 50 Vdc, IDQ = 100 mA| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
| Pulse (100 µsec, 20% Duty Cycle) |
1250 Peak | 230 | 24.0 | 74.0 |
| CW | 1250 CW | 230 | 22.9 | 74.6 |
Application Circuits — Typical Performance
| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 27 | CW | 1300 | 27 | 81 |
| 40 | CW | 1300 | 26 | 85 |
| 81.36 | CW | 1250 | 27 | 84 |
| 87.5-108 | CW | 1100 | 24 | 80 |
| 144-148 | CW | 1250 | 26 | 78 |
| 170-230 | DVBT | 225 | 25 | 30 |
| 352 | Pulse (200 µsec, 20% Duty Cycle) | 1250 | 21.5 | 66 |
| 352 | CW | 1150 | 20.5 | 68 |
| 500 | CW | 1000 | 18 | 58 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pout (W) |
Test Voltage |
Result |
| 230 | Pulse (100 µsec, 20% Duty Cycle) |
>65:1 at all Phase Angles |
1500 Peak (3 dB Overdrive) |
50 | No Device Degradation |
ドキュメント
クイック・リファレンス ドキュメンテーションの種類.