The MMRF1318NR1 is designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in military and commercial CW and pulse applications, such as radio communications and radar.
Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 300 W CW Output Power
Ntrue0PSPMMRF1318Nja1データ・シートData Sheett5201jajajaデータ・シートData Sheet110EnglishMMRF1318N is designed primarily for CW large-signal output and driver applications
with frequencies up to 600 MHz.
1418855860904706309557PSP599.8 KBNoneNonedocumentsNone1418855860904706309557/docs/en/data-sheet/MMRF1318N.pdf599830/docs/en/data-sheet/MMRF1318N.pdfMMRF1318NdocumentsNN2016-10-31ARCHIVED - MMRF1318NR1 10-600 MHz, 300 W, 50 V Broadband RF Power LDMOS Transistor
Data Sheet
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Data Sheet
false0MMRF1318Ndownloadsjatrue1YPSPデータ・シート1/docs/en/data-sheet/MMRF1318N.pdf2016-10-311418855860904706309557PSP1Dec 17, 2014Data SheetMMRF1318N is designed primarily for CW large-signal output and driver applications
with frequencies up to 600 MHz.
None/docs/en/data-sheet/MMRF1318N.pdfEnglishdocuments599830None9800009962129933402022-12-07N/docs/en/data-sheet/MMRF1318N.pdfARCHIVED - MMRF1318NR1 10-600 MHz, 300 W, 50 V Broadband RF Power LDMOS Transistor
Data Sheet
/docs/en/data-sheet/MMRF1318N.pdfdocuments980000996212993340Data SheetNenNoneYpdf0NNARCHIVED - MMRF1318NR1 10-600 MHz, 300 W, 50 V Broadband RF Power LDMOS Transistor
Data Sheet
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