1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs
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RF Power transistors, MMRF1005HR5 and MMRF1005HSR5, are designed for CW and pulse applications operating at 1300 MHz. These devices are suitable for use in defense and commercial CW and pulse applications, such as DME/IFF systems.
製品詳細
Features
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Characterized from 20 V to 50 V for Extended Power Range
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
RF Performance Tables
Typical Pulse Performance
VDD = 50 Vdc, IDQ = 100 mA| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
IRL (dB) |
| Pulse (200 µsec, 10% Duty Cycle) |
250 Peak | 1300 | 22.7 | 57.0 | –18 |
- Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz at all Phase Angles, 250 W Pulse Peak Power, 10% Duty Cycle, 200 µsec
Typical CW Performance
VDD = 50 Vdc, IDQ = 10 mA, TC = 61°C| Signal Type | Pout (W) |
f (MHz) |
Gps (dB) |
ηD (%) |
IRL (dB) |
| CW | 230 CW | 1300 | 20.0 | 53.0 | –25 |
ドキュメント
クイック・リファレンス ドキュメンテーションの種類.