136-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers
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The MMRF2007N wideband integrated circuit is designed with on-chip pre-matching that makes it usable from 136 to 940 MHz. This multi-stage structure is rated for 26 to 32 V operation, has a 2-stage design with off-chip matching for the input and covers all typical modulation formats. This device is ideal for use in military and commercial VHF and UHF radio base station or radar driver applications.
製品詳細
RF Performance Tables
Typical Two-Tone Performance
VDD1 = 28 Vdc, VDD2 = 25 Vdc, IDQ1(A+B) = 60 mA, IDQ2(A+B) = 550 mA, Pout = 35 W Avg.| Frequency | Gps (dB) |
PAE (%) |
IMD (dBc) |
| 850 MHz | 30.6 | 40.1 | –30.5 |
| 900 MHz | 31.9 | 42.4 | –31.0 |
| 940 MHz | 32.6 | 42.1 | –31.3 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 W CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
ドキュメント
クイック・リファレンス ドキュメンテーションの種類.