1400-2800 MHz, 18.6 dB, 21.3 dBm, 0.65 dB NF E-pHEMT LNA | NXP Semiconductors

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1400-2800 MHz, 18.6 dB, 21.3 dBm, 0.65 dB NF E-pHEMT LNA

MML20211H 生産終了 (EOL)
  • このページには、製造中止（生産終了）となった製品の情報が記載されています。本ページに記載されている仕様および情報は、過去の参考情報です。
The MML20211HT1 is a single-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as picocell, femtocell, tower mounted amplifiers (TMA) and receiver front-end circuits. It operates from a single voltage supply and is suitable for applications with frequencies from 1400 to 2800 MHz such as TD-SCDMA, W-CDMA, UMTS, PCS, LTE and BWA.

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製品詳細

Features

  • Ultra Low Noise Figure: 0.65 dB @ 2140 MHz
  • Frequency: 1400-2800 MHz
  • High Reverse Isolation: –35 dB @ 2140 MHz
  • P1dB: 21.3 dBm @ 2140 MHz
  • Small-Signal Gain: 18.6 dB @ 2140 MHz (adjustable externally)
  • Third Order Output Intercept Point: 33 dBm @ 2140 MHz
  • Active Bias Control (adjustable externally)
  • Single 5 V Supply
  • Supply Current: 60 mA
  • 50 Ohm Operation (some external matching required)
  • Cost-effective 8-pin, 2 mm DFN Surface Mount Plastic Package
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7-inch Reel.

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N true 0 PSPMML20211Hja 3 アプリケーション・ノート Application Note t789 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 1 English The MML20211H is a single-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. 1313701662103746316778 PSP 588.8 KB None None documents None 1313701662103746316778 /docs/en/data-sheet/MML20211H.pdf 588832 /docs/en/data-sheet/MML20211H.pdf MML20211H documents N N 2016-10-31 Archived - MML20211HT1 1400-2800 MHz, 18.6 dB, 21.3 dBm E-pHEMT LNA - Data Sheet /docs/en/data-sheet/MML20211H.pdf /docs/en/data-sheet/MML20211H.pdf Data Sheet N 980000996212993340 2024-08-21 pdf N en Sep 26, 2014 980000996212993340 Data Sheet Y N Archived - MML20211HT1 1400-2800 MHz, 18.6 dB, 21.3 dBm E-pHEMT LNA - Data Sheet アプリケーション・ノート Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note パッケージ情報 Package Information 1 3 A English 98ASA0028D, 2132-01, Thermally Enhanced Dual Flat Non-Leaded Package (DFN), 8 Terminal, 0.5 Pitch (2x2x0.85) 1287608289215688593514 PSP 56.1 KB None None documents None 1287608289215688593514 /docs/en/package-information/98ASA00228D.pdf 56110 /docs/en/package-information/98ASA00228D.pdf SOT908-4 documents N N 2016-10-31 98ASA00228D, QFN MAP, 2.0x2.0x0.85, Pitch 0.5, 8 Pins /docs/en/package-information/98ASA00228D.pdf /docs/en/package-information/98ASA00228D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jan 19, 2016 302435339416912908 Package Information D N 98ASA00228D, QFN MAP, 2.0x2.0x0.85, Pitch 0.5, 8 Pins false 0 MML20211H downloads ja true 1 Y PSP アプリケーション・ノート 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 データ・シート 1 /docs/en/data-sheet/MML20211H.pdf 2016-10-31 1313701662103746316778 PSP 1 Sep 26, 2014 Data Sheet The MML20211H is a single-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. None /docs/en/data-sheet/MML20211H.pdf English documents 588832 None 980000996212993340 2024-08-21 N /docs/en/data-sheet/MML20211H.pdf Archived - MML20211HT1 1400-2800 MHz, 18.6 dB, 21.3 dBm E-pHEMT LNA - Data Sheet /docs/en/data-sheet/MML20211H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N Archived - MML20211HT1 1400-2800 MHz, 18.6 dB, 21.3 dBm E-pHEMT LNA - Data Sheet 588.8 KB MML20211H N 1313701662103746316778 パッケージ情報 1 /docs/en/package-information/98ASA00228D.pdf 2016-10-31 1287608289215688593514 PSP 3 Jan 19, 2016 Package Information 98ASA0028D, 2132-01, Thermally Enhanced Dual Flat Non-Leaded Package (DFN), 8 Terminal, 0.5 Pitch (2x2x0.85) None /docs/en/package-information/98ASA00228D.pdf English documents 56110 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00228D.pdf 98ASA00228D, QFN MAP, 2.0x2.0x0.85, Pitch 0.5, 8 Pins /docs/en/package-information/98ASA00228D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00228D, QFN MAP, 2.0x2.0x0.85, Pitch 0.5, 8 Pins 56.1 KB SOT908-4 N 1287608289215688593514 true Y Products

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