The MMRF1011HR5 and MMRF1011HSR5 are RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulse applications, such as L-Band radar.
Ntrue0PSPMMRF1011Hja1データ・シートData Sheett5201jajajaデータ・シートData Sheet110EnglishThe MMRF1011HR5 and MMRF1011HSR5 RF power transistors are designed for applications
operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices
are suitable for use in pulse applications, such as L-Band radar.
1406322794267733430025PSP612.3 KBNoneNonedocumentsNone1406322794267733430025/docs/en/data-sheet/MMRF1011H.pdf612297/docs/en/data-sheet/MMRF1011H.pdfMMRF1011HdocumentsNN2016-10-31ARCHIVED - MMRF1011HR5, MMRF1011HSR5 1400 MHz, 330 W, 50 V Pulse L-Band RF Power MOSFETs
- Data Sheet
/docs/en/data-sheet/MMRF1011H.pdf/docs/en/data-sheet/MMRF1011H.pdfData SheetN9800009962129933402022-12-07pdfNenJul 24, 2014980000996212993340Data SheetYNARCHIVED - MMRF1011HR5, MMRF1011HSR5 1400 MHz, 330 W, 50 V Pulse L-Band RF Power MOSFETs
- Data Sheet
false0MMRF1011Hdownloadsjatrue1YPSPデータ・シート1/docs/en/data-sheet/MMRF1011H.pdf2016-10-311406322794267733430025PSP1Jul 24, 2014Data SheetThe MMRF1011HR5 and MMRF1011HSR5 RF power transistors are designed for applications
operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices
are suitable for use in pulse applications, such as L-Band radar.
None/docs/en/data-sheet/MMRF1011H.pdfEnglishdocuments612297None9800009962129933402022-12-07N/docs/en/data-sheet/MMRF1011H.pdfARCHIVED - MMRF1011HR5, MMRF1011HSR5 1400 MHz, 330 W, 50 V Pulse L-Band RF Power MOSFETs
- Data Sheet
/docs/en/data-sheet/MMRF1011H.pdfdocuments980000996212993340Data SheetNenNoneYpdf0NNARCHIVED - MMRF1011HR5, MMRF1011HSR5 1400 MHz, 330 W, 50 V Pulse L-Band RF Power MOSFETs
- Data Sheet
612.3 KBMMRF1011HN1406322794267733430025trueYProducts