1800-2200 MHz, 27.2 dB, 30.5 dBm InGaP HBT Linear Amplifier | NXP Semiconductors

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1800-2200 MHz, 27.2 dB, 30.5 dBm InGaP HBT Linear Amplifier

MMA20312BV 製造中止
  • このページには、製造中止（生産終了）となった製品の情報が記載されています。本ページに記載されている仕様および情報は、過去の参考情報です。
The MMA20312BVT1 is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 1800 to 2200 MHz such as CDMA, TD-SCDMA, PCS, UMTS and LTE at operating voltages from 3 to 5 V. The amplifier is housed in a low-cost, surface mount QFN plastic package.

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Features

  • Frequency: 1800-2200 MHz
  • P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
  • Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
  • OIP3: 44.5 dBm @ 2140 MHz (W-CDMA Application Circuit)
  • Active Bias Control (adjustable externally)
  • Single 3 to 5 V Supply
  • Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7-inch Reel.

RF Performance Table

TD-SCDMA, W-CDMA Performance

Typical Performance: VCC = 5 Vdc, ICQ = 70 mA, Pout = 17 dBm
Frequency Gps
(dB)		 ACPR
(dBc)		 PAE
(%)		 Test Signal
1880 MHz29.0–47.49.1TD-SCDMA
1920 MHz29.0–46.79.0TD-SCDMA
2010 MHz27.4–52.09.3TD-SCDMA
2025 MHz26.8–50.09.5TD-SCDMA
2140 MHz27.0–51.79.4W-CDMA
N true 0 PSPMMA20312BVja 3 アプリケーション・ノート Application Note t789 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 2 English The MMA20312BV is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femto cell or repeater applications. 1314281954648721004549 PSP 917.8 KB None None documents None 1314281954648721004549 /docs/en/data-sheet/MMA20312BV.pdf 917760 /docs/en/data-sheet/MMA20312BV.pdf MMA20312BV documents N N 2016-10-31 Archived - MMA20312BVT1 1800-2200 MHz, 27.2 dB, 30.5 dBm InGaP HBT Linear Amplifier - Data Sheet /docs/en/data-sheet/MMA20312BV.pdf /docs/en/data-sheet/MMA20312BV.pdf Data Sheet N 980000996212993340 2024-08-22 pdf N en Sep 26, 2014 980000996212993340 Data Sheet Y N Archived - MMA20312BVT1 1800-2200 MHz, 27.2 dB, 30.5 dBm InGaP HBT Linear Amplifier - Data Sheet アプリケーション・ノート Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note パッケージ情報 Package Information 1 3 A English 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) 1286376681419738938713 PSP 279.5 KB None None documents None 1286376681419738938713 /docs/en/package-information/98ASA00227D.pdf 279543 /docs/en/package-information/98ASA00227D.pdf SOT1677-1 documents N N 2017-12-21 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) /docs/en/package-information/98ASA00227D.pdf /docs/en/package-information/98ASA00227D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Nov 30, 2017 302435339416912908 Package Information D N 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) false 0 MMA20312BV downloads ja true 1 Y PSP アプリケーション・ノート 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 データ・シート 1 /docs/en/data-sheet/MMA20312BV.pdf 2016-10-31 1314281954648721004549 PSP 1 Sep 26, 2014 Data Sheet The MMA20312BV is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femto cell or repeater applications. None /docs/en/data-sheet/MMA20312BV.pdf English documents 917760 None 980000996212993340 2024-08-22 N /docs/en/data-sheet/MMA20312BV.pdf Archived - MMA20312BVT1 1800-2200 MHz, 27.2 dB, 30.5 dBm InGaP HBT Linear Amplifier - Data Sheet /docs/en/data-sheet/MMA20312BV.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N Archived - MMA20312BVT1 1800-2200 MHz, 27.2 dB, 30.5 dBm InGaP HBT Linear Amplifier - Data Sheet 917.8 KB MMA20312BV N 1314281954648721004549 パッケージ情報 1 /docs/en/package-information/98ASA00227D.pdf 2017-12-21 1286376681419738938713 PSP 3 Nov 30, 2017 Package Information 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) None /docs/en/package-information/98ASA00227D.pdf English documents 279543 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00227D.pdf 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) /docs/en/package-information/98ASA00227D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) 279.5 KB SOT1677-1 N 1286376681419738938713 true Y Products

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