1800-2200 MHz, 32 W Avg., 48 V Airfast® RF Power GaN Transistor
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The A2G22S160-01SR3 32 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.
This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
製品詳細
RF Performance Tables
2100 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 150 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 2110 MHz | 19.6 | 38.0 | 7.2 | –30.3 | –20 |
| 2140 MHz | 19.9 | 38.3 | 7.1 | –30.0 | –23 |
| 2170 MHz | 20.0 | 39.0 | 7.1 | –29.7 | –19 |
1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 150 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1805 MHz | 18.2 | 36.9 | 7.1 | –33.4 | –11 |
| 1840 MHz | 18.5 | 37.4 | 7.1 | –33.0 | –16 |
| 1880 MHz | 18.6 | 38.2 | 7.0 | –32.5 | –16 |
ドキュメント
クイック・リファレンス ドキュメンテーションの種類.