The AFT18P350-4S2LR6 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 1000 mA,
VGSB = 1.2 Vdc, Pout = 63 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
ηD (%)
Output PAR (dB)
ACPR (dBc)
1805 MHz
16.1
44.5
7.7
–29.8
1840 MHz
16.1
44.3
7.7
–31.6
1880 MHz
15.8
44.1
7.6
–33.0
Ntrue0PSPAFT18P350-4S2Lja1データ・シートData Sheett5201jajajaデータ・シートData Sheet110EnglishThe AFT18P350-4S2LR6 63 watt symmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of 1805 to 1880
MHz.
1367014387975712161295PSP505.9 KBNoneNonedocumentsNone1367014387975712161295/docs/en/data-sheet/AFT18P350-4S2L.pdf505932/docs/en/data-sheet/AFT18P350-4S2L.pdfAFT18P350-4S2LdocumentsNN2016-10-31ARCHIVED - AFT18P350-4S2LR6 1805-1880 MHz, 63 W Avg., 28 V Airfast<sup>®</sup> RF
Power LDMOS Transistors - Data Sheet
/docs/en/data-sheet/AFT18P350-4S2L.pdf/docs/en/data-sheet/AFT18P350-4S2L.pdfData SheetN9800009962129933402022-12-07pdfNenApr 24, 2013980000996212993340Data SheetYNARCHIVED - AFT18P350-4S2LR6 1805-1880 MHz, 63 W Avg., 28 V Airfast<sup>®</sup> RF
Power LDMOS Transistors - Data Sheet
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for cellular base station applications covering the frequency range of 1805 to 1880
MHz.
None/docs/en/data-sheet/AFT18P350-4S2L.pdfEnglishdocuments505932None9800009962129933402022-12-07N/docs/en/data-sheet/AFT18P350-4S2L.pdfARCHIVED - AFT18P350-4S2LR6 1805-1880 MHz, 63 W Avg., 28 V Airfast<sup>®</sup> RF
Power LDMOS Transistors - Data Sheet
/docs/en/data-sheet/AFT18P350-4S2L.pdfdocuments980000996212993340Data SheetNenNoneYpdf0NNARCHIVED - AFT18P350-4S2LR6 1805-1880 MHz, 63 W Avg., 28 V Airfast<sup>®</sup> RF
Power LDMOS Transistors - Data Sheet
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