1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
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The MRF8S18120HR3 and MRF8S18120HSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
製品詳細
RF Performance Tables
1800 MHz
Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW| Frequency | Gps (dB) |
ηD (%) |
| 1805 MHz | 18.2 | 49.8 |
| 1840 MHz | 18.6 | 51.4 |
| 1880 MHz | 18.7 | 53.9 |
- Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW
1800 MHz
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 46 Watts Avg.| Frequency | Gps (dB) |
ηD (%) |
SR1 @ 400 kHz (dBc) |
SR2 @ 600 kHz (dBc) |
EVM (% rms) |
| 1805 MHz | 17.9 | 41.0 | –64 | –76 | 1.6 |
| 1840 MHz | 18.2 | 41.9 | –63 | –76 | 1.7 |
| 1880 MHz | 18.3 | 43.2 | –61 | –76 | 2.0 |
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