1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers | NXP Semiconductors

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1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers

MW6IC2015N
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The MW6IC2015NBR1 and MW6IC2015GNBR1 wideband integrated circuits are designed for base station applications. They use Our newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrate a multi–stage structure. Their wideband on-chip design make them usable from 1805 to 1990 MHz. The linearity performances cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, TDMA, CDMA, W–CDMA and TD–SCDMA.
N true 0 PSPMW6IC2015Nja 8 アプリケーション・ノート Application Note t789 5 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 2 ja ja ja データ・シート Data Sheet 1 1 3 English The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses NXP<sup>&#174;</sup>. newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrates a multi-stage structure. 1141074440365703411870 PSP 1.2 MB None None documents None 1141074440365703411870 /docs/en/data-sheet/MW6IC2015N.pdf 1246751 /docs/en/data-sheet/MW6IC2015N.pdf MW6IC2015N documents N 2006-02-28 MW6IC2015NBR1, MW6IC2015GNBR1 1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers /docs/en/data-sheet/MW6IC2015N.pdf /docs/en/data-sheet/MW6IC2015N.pdf Data Sheet N 980000996212993340 2022-12-07 pdf en Dec 29, 2008 980000996212993340 Data Sheet Y N MW6IC2015NBR1, MW6IC2015GNBR1 1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers アプリケーション・ノート Application Note 5 2 3 English I989356375600 PSP 910.7 KB None None documents None I989356375600 /docs/en/application-note/AN1907.pdf 910737 /docs/en/application-note/AN1907.pdf AN1907 documents N N 2016-11-09 AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf /docs/en/application-note/AN1907.pdf Application Note N 645036621402383989 2025-01-28 pdf N en May 13, 2009 645036621402383989 Application Note Y N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 3 0 English This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. 1236894638615715664840 PSP 449.7 KB None None documents None 1236894638615715664840 /docs/en/application-note/AN3789.pdf 449688 /docs/en/application-note/AN3789.pdf AN3789 documents N N 2016-10-31 Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf /docs/en/application-note/AN3789.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Mar 12, 2009 645036621402383989 Application Note Y N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 4 0 English Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages 1149802174784738095879 PSP 8.3 MB None None documents None 1149802174784738095879 /docs/en/application-note/AN3263.pdf 8285724 /docs/en/application-note/AN3263.pdf AN3263 documents N N 2016-10-31 Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3263.pdf /docs/en/application-note/AN3263.pdf Application Note N 645036621402383989 2022-12-07 pdf N en Jun 7, 2006 645036621402383989 Application Note Y N Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages 5 1 English This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. 1078170496490702478807 PSP 140.7 KB None None documents None 1078170496490702478807 /docs/en/application-note/AN1987.pdf 140747 /docs/en/application-note/AN1987.pdf AN1987 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf /docs/en/application-note/AN1987.pdf Application Note N 645036621402383989 2024-03-13 pdf N en May 12, 2004 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 6 0 English Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. 1065730389394721762372 PSP 134.6 KB None None documents None 1065730389394721762372 /docs/en/application-note/AN1977.pdf 134579 /docs/en/application-note/AN1977.pdf AN1977 documents N N 2016-10-31 Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf /docs/en/application-note/AN1977.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Oct 9, 2003 645036621402383989 Application Note Y N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 パッケージ情報 Package Information 2 7 R English 1329-09, TO-272 Wide Body Multi-Lead Y1002571238784 PSP 81.8 KB None None documents None Y1002571238784 /docs/en/package-information/98ARH99164A.pdf 81763 /docs/en/package-information/98ARH99164A.pdf SOT1727-1 documents N N 2016-10-31 98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins /docs/en/package-information/98ARH99164A.pdf /docs/en/package-information/98ARH99164A.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Feb 29, 2016 302435339416912908 Package Information D N 98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins 8 F English 98ASA10532D, 1329A-04, TO-272WB, 16 Lead Gull Wing Plastic D1031331826047 PSP 60.7 KB None None documents None D1031331826047 /docs/en/package-information/98ASA10532D.pdf 60684 /docs/en/package-information/98ASA10532D.pdf SOT1724-1 documents N N 2016-10-31 98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic /docs/en/package-information/98ASA10532D.pdf /docs/en/package-information/98ASA10532D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jun 30, 2007 302435339416912908 Package Information D N 98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic false 0 MW6IC2015N downloads ja true 1 Y PSP アプリケーション・ノート 5 /docs/en/application-note/AN1907.pdf 2016-11-09 I989356375600 PSP 2 May 13, 2009 Application Note None /docs/en/application-note/AN1907.pdf English documents 910737 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1907.pdf AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages /docs/en/application-note/AN1907.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N N AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages 910.7 KB AN1907 N I989356375600 /docs/en/application-note/AN3789.pdf 2016-10-31 1236894638615715664840 PSP 3 Mar 12, 2009 Application Note This application note provides NXP Semiconductors customers with a guide for mounting high power RF transistors and integrated circuits in Over-Molded Plastic (OMP) packages by clamping down the RF power device in the Power Amplifier (PA) housing. None /docs/en/application-note/AN3789.pdf English documents 449688 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN3789.pdf Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3789.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages 449.7 KB AN3789 N 1236894638615715664840 /docs/en/application-note/AN3263.pdf 2016-10-31 1149802174784738095879 PSP 4 Jun 7, 2006 Application Note Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages None /docs/en/application-note/AN3263.pdf English documents 8285724 None 645036621402383989 2022-12-07 N /docs/en/application-note/AN3263.pdf Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages /docs/en/application-note/AN3263.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages 8.3 MB AN3263 N 1149802174784738095879 /docs/en/application-note/AN1987.pdf 2016-10-31 1078170496490702478807 PSP 5 May 12, 2004 Application Note This application note introduces a bias control circuit that can be used with the NXP<sup>&#174;</sup> family of RF integrated circuits. None /docs/en/application-note/AN1987.pdf English documents 140747 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1987.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 /docs/en/application-note/AN1987.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 140.7 KB AN1987 N 1078170496490702478807 /docs/en/application-note/AN1977.pdf 2016-10-31 1065730389394721762372 PSP 6 Oct 9, 2003 Application Note Using Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit to maintain constant quiescent current over a large temperature range. None /docs/en/application-note/AN1977.pdf English documents 134579 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1977.pdf Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 /docs/en/application-note/AN1977.pdf documents 645036621402383989 Application Note N en None Y pdf 0 N N Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 134.6 KB AN1977 N 1065730389394721762372 データ・シート 1 /docs/en/data-sheet/MW6IC2015N.pdf 2006-02-28 1141074440365703411870 PSP 1 Dec 29, 2008 Data Sheet The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses NXP<sup>&#174;</sup>. newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrates a multi-stage structure. None /docs/en/data-sheet/MW6IC2015N.pdf English documents 1246751 None 980000996212993340 2022-12-07 /docs/en/data-sheet/MW6IC2015N.pdf MW6IC2015NBR1, MW6IC2015GNBR1 1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers /docs/en/data-sheet/MW6IC2015N.pdf documents 980000996212993340 Data Sheet N en None Y pdf 3 N MW6IC2015NBR1, MW6IC2015GNBR1 1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers 1.2 MB MW6IC2015N N 1141074440365703411870 パッケージ情報 2 /docs/en/package-information/98ARH99164A.pdf 2016-10-31 Y1002571238784 PSP 7 Feb 29, 2016 Package Information 1329-09, TO-272 Wide Body Multi-Lead None /docs/en/package-information/98ARH99164A.pdf English documents 81763 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ARH99164A.pdf 98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins /docs/en/package-information/98ARH99164A.pdf documents 302435339416912908 Package Information N en None D pdf R N N 98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins 81.8 KB SOT1727-1 N Y1002571238784 /docs/en/package-information/98ASA10532D.pdf 2016-10-31 D1031331826047 PSP 8 Jun 30, 2007 Package Information 98ASA10532D, 1329A-04, TO-272WB, 16 Lead Gull Wing Plastic None /docs/en/package-information/98ASA10532D.pdf English documents 60684 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10532D.pdf 98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic /docs/en/package-information/98ASA10532D.pdf documents 302435339416912908 Package Information N en None D pdf F N N 98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic 60.7 KB SOT1724-1 N D1031331826047 true Y Products

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