1805-1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
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The MRF8S18210WHSR3 and MRF8S18210WGHSR3 are designed for CDMA base station applications with frequencies from 1805 MHz to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
製品詳細
RF Performance Tables
1900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQ = 1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1930 MHz | 17.8 | 29.2 | 7.0 | –34.2 |
| 1960 MHz | 17.8 | 28.2 | 7.0 | –34.4 |
| 1995 MHz | 18.1 | 27.6 | 7.1 | –34.3 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 1 dB Compression Point ≃ 210 Watts CW
1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 30 Volts, IDQ = 1300 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1805 MHz | 18.2 | 30.1 | 7.3 | –35.1 |
| 1840 MHz | 18.1 | 29.1 | 7.4 | –35.4 |
| 1880 MHz | 18.2 | 27.8 | 7.4 | –35.9 |
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