1805-2025 MHz, 20 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
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The MRF8P20100HR3 and MRF8P20100HSR3 are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
製品詳細
RF Performance Tables
2025 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2025 MHz | 16.0 | 44.3 | 7.8 | –33.5 |
1880-1920 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1880 MHz | 16.2 | 43.5 | 7.6 | –30.8 |
| 1900 MHz | 16.1 | 43.4 | 7.6 | –32.6 |
| 1920 MHz | 15.8 | 42.9 | 7.6 | –34.6 |
1800 MHz
Typical GSM EDGE Performance: VDD = 28 Volts, IDQA = IDQB = 330 mA, Pout = 42 Watts Avg.| Frequency | Gps (dB) |
ηD (%) |
SR1 @ 400 kHz (dBc) |
SR2 @ 600 kHz (dBc) |
EVM (% rms) |
| 1805 MHz | 17.1 | 43.8 | –58.4 | –74.4 | 3.0 |
| 1840 MHz | 17.3 | 42.4 | –60.0 | –75.5 | 2.6 |
| 1880 MHz | 17.1 | 41.7 | –60.5 | –75.3 | 2.4 |
ドキュメント
クイック・リファレンス ドキュメンテーションの種類.