The MRF8P20161HSR3 is designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
ηD (%)
Output PAR (dB)
ACPR (dBc)
1880 MHz
16.5
46.2
6.9
–27.9
1900 MHz
16.5
46.0
6.9
–29.1
1920 MHz
16.4
45.8
7.0
–30.4
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1900 MHz, 142 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 3 dB Compression Point ≃ 147 Watts CW
Ntrue0PSPMRF8P20161Hja1データ・シートData Sheett5201jajajaデータ・シートData Sheet110EnglishDesigned for CDMA base station applications with frequencies from 1880 to 2025 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation
formats.
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MOSFET
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MOSFET
false0MRF8P20161Hdownloadsjatrue1YPSPデータ・シート1/docs/en/data-sheet/MRF8P20161HS.pdf2016-10-311288124460209710513774PSP1Oct 26, 2010Data SheetDesigned for CDMA base station applications with frequencies from 1880 to 2025 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation
formats.
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MOSFET
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MOSFET
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