The AFT20P140-4WNR3 and AFT20P140-4WGNR3 24 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025 MHz.
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 500 mA,
VGSB = 0.6 Vdc, Pout = 24 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
ηD (%)
Output PAR (dB)
ACPR (dBc)
1880 MHz
17.8
41.7
7.7
–31.0
1960 MHz
17.8
41.7
7.7
–33.7
2025 MHz
17.6
41.2
7.8
–34.0
Ntrue0PSPAFT20P140-4WNja1データ・シートData Sheett5201jajajaデータ・シートData Sheet112EnglishAFT20P140-4WN 24 W Avg, 1880-2025 MHz, 28 V symmetrical Doherty RF power LDMOS transistor
for cellular base stations
1364937071222697385645PSP559.0 KBNoneNonedocumentsNone1364937071222697385645/docs/en/data-sheet/AFT20P140-4WN.pdf558999/docs/en/data-sheet/AFT20P140-4WN.pdfAFT20P140-4WNdocumentsNN2016-11-09ARCHIVED - AFT20P140-4WN 1880-2025 MHz, 24 W Avg, 28 V Data Sheet/docs/en/data-sheet/AFT20P140-4WN.pdf/docs/en/data-sheet/AFT20P140-4WN.pdfData SheetN9800009962129933402022-12-07pdfNenOct 26, 2016980000996212993340Data SheetYNARCHIVED - AFT20P140-4WN 1880-2025 MHz, 24 W Avg, 28 V Data Sheetfalse0AFT20P140-4WNdownloadsjatrue1YPSPデータ・シート1/docs/en/data-sheet/AFT20P140-4WN.pdf2016-11-091364937071222697385645PSP1Oct 26, 2016Data SheetAFT20P140-4WN 24 W Avg, 1880-2025 MHz, 28 V symmetrical Doherty RF power LDMOS transistor
for cellular base stations
None/docs/en/data-sheet/AFT20P140-4WN.pdfEnglishdocuments558999None9800009962129933402022-12-07N/docs/en/data-sheet/AFT20P140-4WN.pdfARCHIVED - AFT20P140-4WN 1880-2025 MHz, 24 W Avg, 28 V Data Sheet/docs/en/data-sheet/AFT20P140-4WN.pdfdocuments980000996212993340Data SheetNenNoneYpdf2NNARCHIVED - AFT20P140-4WN 1880-2025 MHz, 24 W Avg, 28 V Data Sheet559.0 KBAFT20P140-4WNN1364937071222697385645trueYProducts