The AFT23H200-4S2LR6 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 500 mA,
VGSB = 0.5 Vdc, Pout = 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
ηD (%)
Output PAR (dB)
ACPR (dBc)
2300 MHz
15.3
42.8
8.4
–27.6
2350 MHz
15.4
43.3
8.3
–31.1
2400 MHz
15.2
42.8
8.3
–33.9
Ntrue0PSPAFT23H200-4S2Lja1データ・シートData Sheett5201jajajaデータ・シートData Sheet111EnglishThe AFT23H200-4S2LR6 45 watt asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of 2300 to 2400
MHz.
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Power LDMOS Transistors - Data Sheet
/docs/en/data-sheet/AFT23H200-4S2L.pdf/docs/en/data-sheet/AFT23H200-4S2L.pdfData SheetN9800009962129933402022-12-07pdfNenMay 13, 2013980000996212993340Data SheetYNARCHIVED - AFT23H200-4S2LR6 2300-2400 MHz, 45 W Avg., 28 V Airfast<sup>®</sup> RF
Power LDMOS Transistors - Data Sheet
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for cellular base station applications covering the frequency range of 2300 to 2400
MHz.
None/docs/en/data-sheet/AFT23H200-4S2L.pdfEnglishdocuments417262None9800009962129933402022-12-07N/docs/en/data-sheet/AFT23H200-4S2L.pdfARCHIVED - AFT23H200-4S2LR6 2300-2400 MHz, 45 W Avg., 28 V Airfast<sup>®</sup> RF
Power LDMOS Transistors - Data Sheet
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Power LDMOS Transistors - Data Sheet
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