MMA25312B|2300-2700 MHz, 26 dB, 31 dBm | NXP Semiconductors

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2300-2700 MHz, 26 dB, 31 dBm InGaP HBT Linear Amplifier

MMA25312B 製造中止
  • このページには、製造中止（生産終了）となった製品の情報が記載されています。本ページに記載されている仕様および情報は、過去の参考情報です。
The MMA25312BT1 is a 2-stage high efficiency InGaP HBT driver amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable for applications with frequencies from 2300 to 2700 MHz using simple external matching components with a 3 to 5 V supply.

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Features

  • Frequency: 2300-2700 MHz
  • P1dB: 31 dBm @ 2500 MHz
  • Power Gain: 26 dB @ 2500 MHz
  • Third Order Output Intercept Point: 40 dBm @ 2500 MHz
  • Active Bias Control (On-chip)
  • Single 3 to 5 V Supply
  • Single-ended Power Detector
  • Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7-inch Reel.

RF Performance Table

WLAN, WiMAX Performance

Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 150 mA
Frequency Pout
(dBm)		 Gps
(dB)		 EVM
(%)		 Test Signal
2450 MHz20.527.43.0WLAN (802.11g)
2350 MHz23.027.23.0WiMAX (802.16e)
N true 0 PSPMMA25312Bja 4 アプリケーション・ノート Application Note t789 2 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 2 English The MMA25312B is a 2-stage high efficiency InGaP HBT driver amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. 1346968629593736561017 PSP 344.9 KB None None documents None 1346968629593736561017 /docs/en/data-sheet/MMA25312B.pdf 344859 /docs/en/data-sheet/MMA25312B.pdf MMA25312B documents N N 2016-10-31 Archived - MMA25312BT1 2300-2700 MHz, 26 dB, 31 dBm InGaP HBT Linear Amplifier - Data Sheet /docs/en/data-sheet/MMA25312B.pdf /docs/en/data-sheet/MMA25312B.pdf Data Sheet N 980000996212993340 2024-08-22 pdf N en Sep 26, 2014 980000996212993340 Data Sheet Y N Archived - MMA25312BT1 2300-2700 MHz, 26 dB, 31 dBm InGaP HBT Linear Amplifier - Data Sheet アプリケーション・ノート Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 3 English NXP Semiconductor's GaAs MMICs and General Purpose Amplifier (GPA) devices are all designed to operate from a single positive voltage supply. The GPAs have output powers ranging from 15 to 33 dBm. 1110219639469699797048 PSP 164.3 KB None None documents None 1110219639469699797048 /docs/en/application-note/AN3100.pdf 164299 /docs/en/application-note/AN3100.pdf AN3100 documents N 2005-03-07 General Purpose Amplifier and MMIC Biasing /docs/en/application-note/AN3100.pdf /docs/en/application-note/AN3100.pdf Application Note N 645036621402383989 2022-12-07 pdf en Mar 30, 2011 645036621402383989 Application Note Y N General Purpose Amplifier and MMIC Biasing パッケージ情報 Package Information 1 4 A English 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) 1286376681419738938713 PSP 279.5 KB None None documents None 1286376681419738938713 /docs/en/package-information/98ASA00227D.pdf 279543 /docs/en/package-information/98ASA00227D.pdf SOT1677-1 documents N N 2017-12-21 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) /docs/en/package-information/98ASA00227D.pdf /docs/en/package-information/98ASA00227D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Nov 30, 2017 302435339416912908 Package Information D N 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) false 0 MMA25312B downloads ja true 1 Y PSP アプリケーション・ノート 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN3100.pdf 2005-03-07 1110219639469699797048 PSP 3 Mar 30, 2011 Application Note NXP Semiconductor's GaAs MMICs and General Purpose Amplifier (GPA) devices are all designed to operate from a single positive voltage supply. The GPAs have output powers ranging from 15 to 33 dBm. None /docs/en/application-note/AN3100.pdf English documents 164299 None 645036621402383989 2022-12-07 /docs/en/application-note/AN3100.pdf General Purpose Amplifier and MMIC Biasing /docs/en/application-note/AN3100.pdf documents 645036621402383989 Application Note N en None Y pdf 3 N General Purpose Amplifier and MMIC Biasing 164.3 KB AN3100 N 1110219639469699797048 データ・シート 1 /docs/en/data-sheet/MMA25312B.pdf 2016-10-31 1346968629593736561017 PSP 1 Sep 26, 2014 Data Sheet The MMA25312B is a 2-stage high efficiency InGaP HBT driver amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. None /docs/en/data-sheet/MMA25312B.pdf English documents 344859 None 980000996212993340 2024-08-22 N /docs/en/data-sheet/MMA25312B.pdf Archived - MMA25312BT1 2300-2700 MHz, 26 dB, 31 dBm InGaP HBT Linear Amplifier - Data Sheet /docs/en/data-sheet/MMA25312B.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N Archived - MMA25312BT1 2300-2700 MHz, 26 dB, 31 dBm InGaP HBT Linear Amplifier - Data Sheet 344.9 KB MMA25312B N 1346968629593736561017 パッケージ情報 1 /docs/en/package-information/98ASA00227D.pdf 2017-12-21 1286376681419738938713 PSP 4 Nov 30, 2017 Package Information 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) None /docs/en/package-information/98ASA00227D.pdf English documents 279543 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00227D.pdf 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) /docs/en/package-information/98ASA00227D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) 279.5 KB SOT1677-1 N 1286376681419738938713 true Y Products

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