The MMRF1024HS 50 W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2496 to 2690 MHz. This part is ideally suited for commercial and defense communications and electronic warfare applications, such as an IED jammer.
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 700 mA, VGSB = 0.4 Vdc, Pout = 50 W Avg.,
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
ηD (%)
Output PAR (dB)
ACPR (dBc)
2496 MHz
14.1
44.6
8.1
–31.5
2590 MHz
14.4
44.9
8.1
–33.8
2690 MHz
14.2
44.2
7.9
–37.6
Ntrue0PSPMMRF1024HSja1データ・シートData Sheett5201jajajaデータ・シートData Sheet110EnglishMMRF1024HS 2496-2690 MHz, 50 W Avg, 28 V RF power LDMOS transistor for commercial
and defense communications and electronic warfare applications
1460384727964711741565PSP428.3 KBNoneNonedocumentsNone1460384727964711741565/docs/en/data-sheet/MMRF1024HS.pdf428337/docs/en/data-sheet/MMRF1024HS.pdfMMRF1024HSdocumentsNN2016-10-31ARCHIVED - MMRF1024HS 2496-2690 MHz, 50 W Avg, 28 V Data Sheet/docs/en/data-sheet/MMRF1024HS.pdf/docs/en/data-sheet/MMRF1024HS.pdfData SheetN9800009962129933402022-12-07pdfNenApr 4, 2016980000996212993340Data SheetYNARCHIVED - MMRF1024HS 2496-2690 MHz, 50 W Avg, 28 V Data Sheetfalse0MMRF1024HSdownloadsjatrue1YPSPデータ・シート1/docs/en/data-sheet/MMRF1024HS.pdf2016-10-311460384727964711741565PSP1Apr 4, 2016Data SheetMMRF1024HS 2496-2690 MHz, 50 W Avg, 28 V RF power LDMOS transistor for commercial
and defense communications and electronic warfare applications
None/docs/en/data-sheet/MMRF1024HS.pdfEnglishdocuments428337None9800009962129933402022-12-07N/docs/en/data-sheet/MMRF1024HS.pdfARCHIVED - MMRF1024HS 2496-2690 MHz, 50 W Avg, 28 V Data Sheet/docs/en/data-sheet/MMRF1024HS.pdfdocuments980000996212993340Data SheetNenNoneYpdf0NNARCHIVED - MMRF1024HS 2496-2690 MHz, 50 W Avg, 28 V Data Sheet428.3 KBMMRF1024HSN1460384727964711741565trueYProducts