AFT26HW050S|2496-2690 MHz, 9 W Avg, 28 V | NXP Semiconductors

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2496-2690 MHz, 9 W Avg., 28 V Airfast® RF Power LDMOS Transistors

AFT26HW050S
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The AFT26HW050SR3, AFT26HW050GSR3 and AFT26H050W26SR3 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

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RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 100 mA, VGSB = 1.4 Vdc, Pout = 9 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
2620 MHz14.948.67.9–28.4
2655 MHz14.648.37.9–32.6
2690 MHz14.247.17.8–37.3
N true 0 PSPAFT26HW050Sja 1 データ・シート Data Sheet t520 1 ja ja ja データ・シート Data Sheet 1 1 2 English The AFT26HW050SR3, AFT26HW050GSR3 and AFT26H050W26SR3 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. 1367889825337706853067 PSP 772.8 KB None None documents None 1367889825337706853067 /docs/en/data-sheet/AFT26HW050S.pdf 772828 /docs/en/data-sheet/AFT26HW050S.pdf AFT26HW050S documents N N 2016-10-31 ARCHIVED - AFT26HW050SR3, AFT26HW050GSR3, AFT26H050W26SR3 2496-2690 MHz, 9 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/AFT26HW050S.pdf /docs/en/data-sheet/AFT26HW050S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Jul 30, 2013 980000996212993340 Data Sheet Y N ARCHIVED - AFT26HW050SR3, AFT26HW050GSR3, AFT26H050W26SR3 2496-2690 MHz, 9 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet false 0 AFT26HW050S downloads ja true 1 Y PSP データ・シート 1 /docs/en/data-sheet/AFT26HW050S.pdf 2016-10-31 1367889825337706853067 PSP 1 Jul 30, 2013 Data Sheet The AFT26HW050SR3, AFT26HW050GSR3 and AFT26H050W26SR3 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. None /docs/en/data-sheet/AFT26HW050S.pdf English documents 772828 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/AFT26HW050S.pdf ARCHIVED - AFT26HW050SR3, AFT26HW050GSR3, AFT26H050W26SR3 2496-2690 MHz, 9 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet /docs/en/data-sheet/AFT26HW050S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N ARCHIVED - AFT26HW050SR3, AFT26HW050GSR3, AFT26H050W26SR3 2496-2690 MHz, 9 W Avg., 28 V Airfast<sup>®</sup> RF Power LDMOS Transistors - Data Sheet 772.8 KB AFT26HW050S N 1367889825337706853067 true Y Products

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