The MMRF1013HR5 and MMRF1013HSR5 are RF Power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.
Capable of Handling 10:1 VSWR @ 32 Vdc, 2900 MHz, 320 W Peak Power, 300 µsec,
10% Duty Cycle (3 dB Input Overdrive from Rated Pout)
Ntrue0PSPMMRF1013Hja1データ・シートData Sheett5201jajajaデータ・シートData Sheet110EnglishMMRF1013HR5 and MMRF1013HSR5 are RF power transistors designed for aerospace and defense
S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.
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MOSFETs - Data Sheet
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MOSFETs - Data Sheet
false0MMRF1013Hdownloadsjatrue1YPSPデータ・シート1/docs/en/data-sheet/MMRF1013H.pdf2016-10-311406329448946693165706PSP1Jul 25, 2014Data SheetMMRF1013HR5 and MMRF1013HSR5 are RF power transistors designed for aerospace and defense
S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.
None/docs/en/data-sheet/MMRF1013H.pdfEnglishdocuments864151None9800009962129933402022-12-07N/docs/en/data-sheet/MMRF1013H.pdfARCHIVED - MMRF1013HR5, MMRF1013HSR5 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power
MOSFETs - Data Sheet
/docs/en/data-sheet/MMRF1013H.pdfdocuments980000996212993340Data SheetNenNoneYpdf0NNARCHIVED - MMRF1013HR5, MMRF1013HSR5 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power
MOSFETs - Data Sheet
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