3 W CW over 1.8-941 MHz, 7.5 V Wideband RF Power LDMOS Transistor
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The AFT05MS003N is designed for handheld two-way radio applications with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large-signal, common-source amplifier applications in handheld radio equipment.
製品詳細
RF Performance Tables
Wideband Performance
(7.5 Vdc, TA = 25°C, CW)| Frequency (MHz) |
Pin (dBm) |
Gps (dB) |
ηD (%) |
Pout (W) |
| 136-174(1,4) | 17.8 | 17.1 | 67.1 | 3.2 |
| 350-520(2,4) | 20.0 | 15.1 | 73.0 | 3.2 |
Narrowband Performance
(7.5 Vdc, TA = 25°C, CW)| Frequency (MHz) |
Gps (dB) |
ηD (%) |
Pout (W) |
| 520(3) | 20.8 | 68.3 | 3.0 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (dBm) |
Test Voltage |
Result |
| 520(3) | CW | > 65:1 at all Phase Angles | 21.1 | 9.0 | No Device Degradation |
2. Measured in 350-520 MHz UHF broadband reference circuit.
3. Measured in 520 MHz narrowband production test circuit.
4. The values shown are the center band performance numbers across the indicated frequency range.
ドキュメント
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