デザイン・ファイル
完全な内訳を受け取ります。 製品の設置面積などについては、 eCad ファイル.
300 W CW over 2400-2500 MHz, 50 V RF Power GaN Transistor
- このページには、製造中止（生産終了）となった製品の情報が記載されています。本ページに記載されている仕様および情報は、過去の参考情報です。
This MHTG1200HS 300 W GaN transistor is designed for industrial, scientific and medical (ISM) applications at 2450 MHz. This device is suitable for use in CW, pulse, cycling and linear applications. This high gain, high efficiency device is easy to use and will provide long life in even the most demanding environments.
This part is characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
NI-780S-4L
製品詳細
Features
- Characterized with series equivalent large-signal impedance parameters and common source S-parameters
- Internally matched for ease of use
- Qualified for operation at 55 Vdc
- Integrated ESD protection
- 150°C case operating temperature
- 225°C die temperature capability
- RoHS Compliant
- Consumer cooking
- Commercial cooking
RF Performance Tables
Typical Performance
In 2400-2500 MHz MHTG1200HS reference circuit, VDD = 48 Vdc, VGS(A+B) = –5 Vdc (1)| Frequency (MHz) |
Signal Type | Pin (W) |
Pout (W) |
Gps (dB) |
ηD (%) |
| 2400 | CW | 10.0 | 336 | 15.3 | 70.4 |
| 2450 | 10.0 | 332 | 15.2 | 73.0 | |
| 2500 | 10.0 | 307 | 14.9 | 74.4 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 2450 | Pulse (100 µsec, 20% Duty Cycle) | > 20:1 at All Phase Angles | 12.6 Peak | 55 | No Device Degradation |
購入/パラメータ
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ドキュメント
クイック・リファレンス ドキュメンテーションの種類.
