These 300 W CW GaN transistors, MRF24G300HS and MRF24G300H, are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments.
These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of these frequencies.
| Frequency (MHz) |
Signal Type | Pin (W) |
Pout (W) |
Gps (dB) |
ηD (%) |
| 2400 | CW | 10.0 | 336 | 15.3 | 70.4 |
| 2450 | 10.0 | 332 | 15.2 | 73.0 | |
| 2500 | 10.0 | 307 | 14.9 | 74.4 |
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 2450 | Pulse (100 µsec, 20% Duty Cycle) | > 20:1 at All Phase Angles | 12.6 Peak | 55 | No Device Degradation |
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クイック・リファレンス ドキュメンテーションの種類.
5 ドキュメント
2 設計・ファイル
完全な内訳を受け取ります。 製品の設置面積などについては、 eCad ファイル.
