MMZ09312B|400-1000 MHz, 31.7 dB, Amplifier | NXP Semiconductors

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400-1000 MHz, 31.7 dB, 29.6 dBm InGaP HBT Linear Amplifier

MMZ09312B 生産終了 (EOL)
  • このページには、製造中止（生産終了）となった製品の情報が記載されています。本ページに記載されている仕様および情報は、過去の参考情報です。
The MMZ09312BT1 is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. It is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee® at operating voltages from 3 to 5 Volts.

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Features

  • Frequency: 400-1000 MHz
  • P1dB: 29.6 dBm @ 900 MHz
  • Power Gain: 31.7 dB @ 900 MHz
  • OIP3: 42 dBm @ 900 MHz
  • Active Bias Control (adjustable externally)
  • Single 3 to 5 Volt Supply
  • Performs Well with Digital Predistortion Systems
  • Single-ended Power Detector
  • Cost-effective 12-pin, 3 mm QFN Surface Mount Package
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7-inch Reel.

RF Performance Table

CDMA, LTE, Zigbee Performance

Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 74 mA
Frequency Pout
(dBm)		 Gps
(dB)		 ACPR
(dBc)		 PAE
(%)		 Test Signal
900 MHz24 31.5–50.026.0IS-95 CDMA
900 MHz18.0 31.5–50.010.81C W-CDMA TM1
900 MHz17.0 31.5–50.09.010 MHz LTE TM1.1
750 MHz17.532.0–50.015.3LTE 10/20 MHz
450 MHz29 33.0–40.057.0ZigBee

購入/パラメータ

1 結果

除外 1 NRND

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注文

コンピュータ支援設計 モデル

状況

MMZ09312B
データ・シート

生産終了 (EOL)

N true 0 PSPMMZ09312Bja 3 アプリケーション・ノート Application Note t789 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 2 English The MMZ09312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. 1320443822671691031975 PSP 1.4 MB None None documents None 1320443822671691031975 /docs/en/data-sheet/MMZ09312B.pdf 1382102 /docs/en/data-sheet/MMZ09312B.pdf MMZ09312B documents N N 2016-10-31 Archived - MMZ09312BT1 400-1000 MHz, 31.7 dB, 29.6 dBm InGaP HBT Linear Amplifier Data Sheet /docs/en/data-sheet/MMZ09312B.pdf /docs/en/data-sheet/MMZ09312B.pdf Data Sheet N 980000996212993340 2024-08-21 pdf N en Jan 15, 2015 980000996212993340 Data Sheet Y N Archived - MMZ09312BT1 400-1000 MHz, 31.7 dB, 29.6 dBm InGaP HBT Linear Amplifier Data Sheet アプリケーション・ノート Application Note 1 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note パッケージ情報 Package Information 1 3 A English 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) 1286376681419738938713 PSP 279.5 KB None None documents None 1286376681419738938713 /docs/en/package-information/98ASA00227D.pdf 279543 /docs/en/package-information/98ASA00227D.pdf SOT1677-1 documents N N 2017-12-21 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) /docs/en/package-information/98ASA00227D.pdf /docs/en/package-information/98ASA00227D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Nov 30, 2017 302435339416912908 Package Information D N 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) false 0 MMZ09312B downloads ja true 1 Y PSP アプリケーション・ノート 1 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 データ・シート 1 /docs/en/data-sheet/MMZ09312B.pdf 2016-10-31 1320443822671691031975 PSP 1 Jan 15, 2015 Data Sheet The MMZ09312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications. None /docs/en/data-sheet/MMZ09312B.pdf English documents 1382102 None 980000996212993340 2024-08-21 N /docs/en/data-sheet/MMZ09312B.pdf Archived - MMZ09312BT1 400-1000 MHz, 31.7 dB, 29.6 dBm InGaP HBT Linear Amplifier Data Sheet /docs/en/data-sheet/MMZ09312B.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N Archived - MMZ09312BT1 400-1000 MHz, 31.7 dB, 29.6 dBm InGaP HBT Linear Amplifier Data Sheet 1.4 MB MMZ09312B N 1320443822671691031975 パッケージ情報 1 /docs/en/package-information/98ASA00227D.pdf 2017-12-21 1286376681419738938713 PSP 3 Nov 30, 2017 Package Information 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) None /docs/en/package-information/98ASA00227D.pdf English documents 279543 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00227D.pdf 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) /docs/en/package-information/98ASA00227D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00227D, 2131-01, Thermally Enhanced Quad Flat Non-Leaded Package (QFN) 12 Terminal, 0.5 Pitch (3x3x0.85) 279.5 KB SOT1677-1 N 1286376681419738938713 true Y Products

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