728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE RF Power LDMOS Transistors
- このページには、製造中止（生産終了）となった製品の情報が記載されています。本ページに記載されている仕様および情報は、過去の参考情報です。
The MRF8P9040N, MRF8P9040GN and MRF8P9040NB are designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
製品詳細
RF Performance Tables
Driver Application — 900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
ACPR (dBc) |
| 920 MHz | 18.9 | 18.9 | –49.6 |
| 940 MHz | 19.1 | 19.5 | –50.1 |
| 960 MHz | 19.1 | 19.9 | –48.8 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 63 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Typical Pout @ 1 dB Compression Point ≃ 42 Watts CW
Driver Application — 700 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 320 mA, Pout = 4.0 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
ACPR (dBc) |
| 728 MHz | 19.9 | 18.7 | –49.9 |
| 748 MHz | 20.1 | 19.1 | –50.0 |
| 768 MHz | 20.0 | 19.5 | –49.9 |
