85 W CW over 1.8-1215 MHz, 50 V Wideband RF Power LDMOS Transistor
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The MRF085H high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications and sub-GHz aerospace and defense and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 1215 MHz.
Typical Applications
製品詳細
RF Performance Tables
Typical Performance
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 30-520 (1,2) | CW | 50 CW | 14.0 | 40.0 |
| 520 (3) | CW | 85 CW | 25.6 | 73.3 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 520 (3) | CW | > 65:1 at all Phase Angles | 0.56 (3 dB Overdrive) | 50 | No Device Degradation |
2. The values shown are the minimum measured performance numbers across the indicated frequency range.
3. Measured in 520 MHz narrowband test circuit.
- Industrial, Scientific, Medical (ISM)
- Laser generation
- Plasma etching
- Particle accelerators
- Industrial heating, welding and drying systems
- Broadcast
- Radio broadcast
- VHF TV broadcast
- Aerospace
- VHF omnidirectional range (VOR)
- HF and VHF communications
- Weather radar
- Mobile Radio
- VHF and UHF radios
