865-960 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
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The MRF8S9120NR3 is designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
製品詳細
RF Performance Tables
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 920 MHz | 20.1 | 34.6 | 6.3 | –37.2 |
| 940 MHz | 20.0 | 34.3 | 6.3 | –37.3 |
| 960 MHz | 19.8 | 34.2 | 6.3 | –37.4 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 120 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW
800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 865 MHz | 20.8 | 35.0 | 6.2 | –37.1 |
| 880 MHz | 20.8 | 35.0 | 6.2 | –37.5 |
| 895 MHz | 20.6 | 34.8 | 6.2 | –38.0 |
ドキュメント
クイック・リファレンス ドキュメンテーションの種類.