920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
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The MRF8P9300HR6 and MRF8P9300HSR6 are designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
製品詳細
RF Performance Tables
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 920 MHz | 19.6 | 35.4 | 6.0 | –37.3 |
| 940 MHz | 19.6 | 35.6 | 6.0 | –37.1 |
| 960 MHz | 19.4 | 35.8 | 5.9 | –36.7 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Typical Pout @ 1 dB Compression Point ≃ 326 Watts CW
800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 2400 mA, Pout = 100 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 865 MHz | 20.5 | 35.2 | 6.0 | –36.1 |
| 880 MHz | 20.7 | 36.0 | 6.0 | –36.1 |
| 895 MHz | 20.6 | 37.0 | 6.0 | –35.8 |
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