The MRF8S9202NR3 and MRF8S9202GNR3 are designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA, Pout = 58 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
ηD (%)
Output PAR (dB)
ACPR (dBc)
920 MHz
19.0
36.3
6.3
–38.2
940 MHz
19.1
37.2
6.2
–38.0
960 MHz
18.9
37.3
6.1
–37.1
Capable of Handling 7:1 VSWR, @ 32 Vdc, 920 MHz, 290 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point ≃ 200 Watts CW
Ntrue0PSPMRF8S9202Nja1データ・シートData Sheett5201jajajaデータ・シートData Sheet111EnglishDesigned for CDMA base station applications with frequencies from 920 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation
formats.
1293048297711714236409PSP805.3 KBNoneNonedocumentsNone1293048297711714236409/docs/en/data-sheet/MRF8S9202N.pdf805285/docs/en/data-sheet/MRF8S9202N.pdfMRF8S9202NdocumentsNN2016-10-31ARCHIVED - MRF8S9202NR3, MRF8S9202GNR3 920-960 MHz, 58 W Avg., 28 V Single W-CDMA
Lateral N-Channel RF Power MOSFETs
/docs/en/data-sheet/MRF8S9202N.pdf/docs/en/data-sheet/MRF8S9202N.pdfData SheetN9800009962129933402022-12-07pdfNenFeb 2, 2012980000996212993340Data SheetYNARCHIVED - MRF8S9202NR3, MRF8S9202GNR3 920-960 MHz, 58 W Avg., 28 V Single W-CDMA
Lateral N-Channel RF Power MOSFETs
false0MRF8S9202Ndownloadsjatrue1YPSPデータ・シート1/docs/en/data-sheet/MRF8S9202N.pdf2016-10-311293048297711714236409PSP1Feb 2, 2012Data SheetDesigned for CDMA base station applications with frequencies from 920 to 960 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation
formats.
None/docs/en/data-sheet/MRF8S9202N.pdfEnglishdocuments805285None9800009962129933402022-12-07N/docs/en/data-sheet/MRF8S9202N.pdfARCHIVED - MRF8S9202NR3, MRF8S9202GNR3 920-960 MHz, 58 W Avg., 28 V Single W-CDMA
Lateral N-Channel RF Power MOSFETs
/docs/en/data-sheet/MRF8S9202N.pdfdocuments980000996212993340Data SheetNenNoneYpdf1NNARCHIVED - MRF8S9202NR3, MRF8S9202GNR3 920-960 MHz, 58 W Avg., 28 V Single W-CDMA
Lateral N-Channel RF Power MOSFETs
805.3 KBMRF8S9202NN1293048297711714236409trueYProducts