920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
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The MRF8S9100HR3 and MRF8S9100HSR3 are designed for GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
製品詳細
RF Performance Tables
900 MHz
Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 72 Watts CW| Frequency | Gps (dB) |
ηD (%) |
| 920 MHz | 19.3 | 51.6 |
| 940 MHz | 19.3 | 52.9 |
| 960 MHz | 19.1 | 54.1 |
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 133 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
- Typical Pout @ 1 dB Compression Point ≃ 108 Watts CW
900 MHz
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 45 Watts Avg.| Frequency | Gps (dB) |
ηD (%) |
SR1 @ 400 kHz (dBc) |
SR2 @ 600 kHz (dBc) |
EVM (% rms) |
| 920 MHz | 19.1 | 43 | –64.1 | –74.5 | 1.8 |
| 940 MHz | 19.1 | 44 | –63.6 | –74.6 | 2.0 |
| 960 MHz | 19.0 | 45 | –62.8 | –75.1 | 2.3 |
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