MMRF1008H|960-1215 MHz, 275 W, 50 V Pulse | NXP Semiconductors

960-1215 MHz, 275 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

  • このページには、製造中止(生産終了)となった製品の情報が記載されています。本ページに記載されている仕様および情報は、過去の参考情報です。

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製品詳細

Features

  • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 20.3 dB
    Drain Efficiency: 65.5%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power
  • Typical Broadband Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 Watts Avg.), f = 960–1215 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 19.8 dB
    Drain Efficiency: 58%
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant

購入/パラメータ

2 結果

除外 2 NRND

注文

コンピュータ支援設計 モデル

状況

生産終了 (EOL)

生産終了 (EOL)

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