Advanced DDR Memory Termination Power with External Reference Voltage In

Advanced DDR Memory Termination Power with External Reference Voltage In | NXP Semiconductors

The NE57810TK is designed to provide power for termination of a Double Data Rate (DDR) SDRAM memory bus. It significantly reduces parts count, board space, and overall system cost compared to previous solutions.

The NE57810TK DDR termination regulator maintains an output voltage (DDR reference bus voltage) that is half the RAM supply voltage. It is capable of providing up to ± 3.5 A for sustained periods. Overcurrent limiting protects the NE57810TK from inrush currents at start-up. Overtemperature shutdown protects the device in extreme temperature situations.

The package is thermally robust for flexibility of thermal design. The NE57810TK is a linear regulator so no external inductors or switching FETs are necessary. Fast response to load changes reduces the need for output capacitors.

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製品詳細

Features

Fast transient response time
Overtemperature protection
Overcurrent protection
Commercial (0 °C to +70 °C) temperature range
Reduced need for external components (switching FETs, inductors, decoupling capacitors)
Internal divider maintains termination voltage at half the memory supply voltage
Reference out for other memory and control components
Optional external voltage reference in for flexible application
Compatible with DDR-I (V_DD = 2.5 V) or DDR-II (V_DD = 1.8 V) SDRAM systems