デザイン・ファイル
完全な内訳を受け取ります。 製品の設置面積などについては、 eCad ファイル.
SiGe:C Low Noise Amplifier MMIC with Bypass Switch for LTE/5G NR
- このページには、製造中止（生産終了）となった製品の情報が記載されています。本ページに記載されている仕様および情報は、過去の参考情報です。
The BGS8U5 is a low noise amplifier (LNA) with bypass switch for LTE and 5G NR receiver applications. It is available in a small plastic 6-pin thin leadless package.
The BGS8U5 delivers system-optimized gain for LTE bands 42 and 43 where sensitivity improvement is required. Complete 5G NR bands n77, n78, and n79 are supported. When receive signal strength is sufficient, the BGS8U5 can be switched off to operate in bypass mode. Switching to bypass mode results into an increased IP3i level and supply current in bypass mode at 1 μA. The BGS8U5 requires only one external matching inductor up to 4200 MHz.
The BGS8U5 is optimized for 3300 MHz to 4200 MHz, and with one additional output matching inductor optimized for 4400-5000 MHz.
製品詳細
- Operating frequency from 3300 MHz to 5000 MHz
- Noise figure 1.0 dB
- Gain 15 dB
- High input 1 dB compression point -8 dBm
- High in band IP3i 4 dBm
- Bypass switch insertion loss -3.2 dB
- Supply voltage 1.5 V to 3.1 V
- Integrated RF supply decoupling capacitor
- Optimized performance at a supply current 4.7 mA
- Bypass mode current consumption < 1 μA
- Integrated temperature stabilized bias for easy design
- Requires only one input matching inductor
- Input and output AC coupled through DC blocking capacitors
- Integrated matching for the output (LTE B42/43, 5G NR n77/n78)
- ESD protection on all pins
- Low bill of materials (BOM)
- 6-pins leadless package; 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch
- 180 GHz transit frequency - SiGe:C technology
- Moisture sensitivity level 1
Applications
- LNA for LTE and 5G NR reception in smartphones
- Feature phones
- Tablet PCs
- RF front-end modules
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ドキュメント
クイック・リファレンス ドキュメンテーションの種類.
