デザイン・ファイル
完全な内訳を受け取ります。 製品の設置面積などについては、 eCad ファイル.
SiGe:C Low-Noise Amplifier MMIC with Bypass Switch for LTE
- このページでは、新規設計を推奨しない製品に関する情報を掲載しています。
The BGS8L2 is, also known as the LTE3001L, a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin extremely thin leadless package. The BGS8L2 requires one external matching inductor.
The BGS8L2 delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of these low noise devices ensures the required receive sensitivity independent of cellular transmit power level in FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, the BGS8L2 can be switched off to operate in bypass mode at a 1 µA current, to lower power consumption.
The BGS8L2 is optimized for 728 MHz to 960 MHz.
6-Pin Leadless Package
製品詳細
Features
- Operating frequency from 728 MHz to 960 MHz
- Noise figure = 0.85 dB
- Gain 13 dB
- High input 1 dB compression point of -1 dBm
- Bypass switch insertion loss of 1.9 dB
- IP3i of 1.5 dBm
- Supply voltage 1.5 V to 3.1 V
- Self shielding package concept
- Integrated supply decoupling capacitor
- Optimized performance at a supply current of 5.2 mA
- Power-down mode current consumption < 1 µA
- Integrated temperature stabilized bias for easy design
- Require only one input matching inductor
- Input and output DC decoupled
- ESD protection on all pins (HBM > 2 kV)
- Integrated matching for the output
- Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
- 180 GHz transit frequency - SiGe:C technology
- Moisture sensitivity level of 1
Target Applications
- LNA for LTE reception in smart phones
- Feature phones
- Tablet PCs
- RF front-end modules
購入/パラメータ
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ドキュメント
クイック・リファレンス ドキュメンテーションの種類.
3 ドキュメント
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アプリケーション・ノート
BGS8L2 LTE LNA with bypass switch evaluation board
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サポート情報
Solderlayout SOT1232
