A3G22H400-04S|Airfast RF Power GaN Transistor | NXP Semiconductors

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1800-2200 MHz, 79 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G22H400-04S
生産終了 (EOL)

The A3G22H400-04S 79 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1800 to 2200 MHz.

This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHS compliant

RF Performance Tables

2100 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQA = 200 mA, VGSB = –5.4 Vdc, Pout = 79 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
2110 MHz15.456.67.1–33.1
2140 MHz15.456.67.1–34.9
2170 MHz15.456.67.1–34.9
2200 MHz15.356.57.0–34.5

1800 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 200 mA, VGSB = –5.5 Vdc, Pout = 89 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
1805 MHz15.156.07.0–31.1
1840 MHz15.656.57.1–31.8
1880 MHz15.158.77.0–30.8
1. All data measured in fixture with device soldered to heatsink.

購入/パラメータ

1 結果

除外 1 NRND

パーツ

説明を表示

コンピュータ支援設計 モデル

状況

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

ダイ技術

A3G22H400-04S
データ・シート

生産終了 (EOL)

1800

2200

48

56

400

GaN

N true 0 PSPA3G22H400-04Sja 3 アプリケーション・ノート Application Note t789 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 0 English A3G22H400-04S 1800-2200 MHz, 79 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations 1527131496543711396250 PSP 394.7 KB None None documents None 1527131496543711396250 /docs/en/data-sheet/A3G22H400-04S.pdf 394662 /docs/en/data-sheet/A3G22H400-04S.pdf A3G22H400-04S documents N N 2018-05-23 A3G22H400-04S 1800-2200 MHz, 79 W Avg, 48 V GaN Data Sheet /docs/en/data-sheet/A3G22H400-04S.pdf /docs/en/data-sheet/A3G22H400-04S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 22, 2018 980000996212993340 Data Sheet Y N A3G22H400-04S 1800-2200 MHz, 79 W Avg, 48 V GaN Data Sheet アプリケーション・ノート Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages パッケージ情報 Package Information 1 3 C English 98ASA10718D, 465H-02, NI-780S-4L 1145376001821716037786 PSP 42.9 KB None None documents None 1145376001821716037786 /docs/en/package-information/98ASA10718D.pdf 42869 /docs/en/package-information/98ASA10718D.pdf 98ASA10718D documents N N 2016-10-31 NI-780S-4L /docs/en/package-information/98ASA10718D.pdf /docs/en/package-information/98ASA10718D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Aug 15, 2016 302435339416912908 Package Information D N NI-780S-4L false 0 A3G22H400-04S downloads ja true 1 Y PSP Y Y アプリケーション・ノート 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 データ・シート 1 /docs/en/data-sheet/A3G22H400-04S.pdf 2018-05-23 1527131496543711396250 PSP 1 May 22, 2018 Data Sheet A3G22H400-04S 1800-2200 MHz, 79 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations None /docs/en/data-sheet/A3G22H400-04S.pdf English documents 394662 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3G22H400-04S.pdf A3G22H400-04S 1800-2200 MHz, 79 W Avg, 48 V GaN Data Sheet /docs/en/data-sheet/A3G22H400-04S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A3G22H400-04S 1800-2200 MHz, 79 W Avg, 48 V GaN Data Sheet 394.7 KB A3G22H400-04S N 1527131496543711396250 パッケージ情報 1 /docs/en/package-information/98ASA10718D.pdf 2016-10-31 1145376001821716037786 PSP 3 Aug 15, 2016 Package Information 98ASA10718D, 465H-02, NI-780S-4L None /docs/en/package-information/98ASA10718D.pdf English documents 42869 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA10718D.pdf NI-780S-4L /docs/en/package-information/98ASA10718D.pdf documents 302435339416912908 Package Information N en None D pdf C N N NI-780S-4L 42.9 KB 98ASA10718D N 1145376001821716037786 true Y Products

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