2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs | NXP Semiconductors

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2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

MRF7S21110H
The MRF7S21110HR3 and MRF7S21110HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

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Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 33 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 17.3 dB
    Drain Efficiency: 32.5%
    Device Output Signal PAR:  6.1 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –38 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW Peak Tuned Output Power
  • Pout @ 1 dB Compression Point ≥ 110 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
N true 0 PSPMRF7S21110Hja 3 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 2 ja ja ja データ・シート Data Sheet 1 1 2 English Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. 1189905878828711012691 PSP 760.1 KB None None documents None 1189905878828711012691 /docs/en/data-sheet/MRF7S21110H.pdf 760052 /docs/en/data-sheet/MRF7S21110H.pdf MRF7S21110H documents N N 2016-10-31 MRF7S21110HR3, MRF7S21110HSR3 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF7S21110H.pdf /docs/en/data-sheet/MRF7S21110H.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Mar 31, 2011 980000996212993340 Data Sheet Y N MRF7S21110HR3, MRF7S21110HSR3 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs パッケージ情報 Package Information 2 2 J English NI-780S, 465A-06 E1003176922206 PSP 43.5 KB None None documents None E1003176922206 /docs/en/package-information/98ASB16718C.pdf 43526 /docs/en/package-information/98ASB16718C.pdf SOT1793-1 documents N N 2016-10-31 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins /docs/en/package-information/98ASB16718C.pdf /docs/en/package-information/98ASB16718C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins 3 H English NI-780 U1003176831092 PSP 44.1 KB None None documents None U1003176831092 /docs/en/package-information/98ASB15607C.pdf 44100 /docs/en/package-information/98ASB15607C.pdf SOT1792-1 documents N N 2016-10-31 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins /docs/en/package-information/98ASB15607C.pdf /docs/en/package-information/98ASB15607C.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Mar 22, 2016 302435339416912908 Package Information D N 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins false 0 MRF7S21110H downloads ja true 1 Y PSP データ・シート 1 /docs/en/data-sheet/MRF7S21110H.pdf 2016-10-31 1189905878828711012691 PSP 1 Mar 31, 2011 Data Sheet Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. None /docs/en/data-sheet/MRF7S21110H.pdf English documents 760052 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/MRF7S21110H.pdf MRF7S21110HR3, MRF7S21110HSR3 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs /docs/en/data-sheet/MRF7S21110H.pdf documents 980000996212993340 Data Sheet N en None Y pdf 2 N N MRF7S21110HR3, MRF7S21110HSR3 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs 760.1 KB MRF7S21110H N 1189905878828711012691 パッケージ情報 2 /docs/en/package-information/98ASB16718C.pdf 2016-10-31 E1003176922206 PSP 2 Mar 22, 2016 Package Information NI-780S, 465A-06 None /docs/en/package-information/98ASB16718C.pdf English documents 43526 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB16718C.pdf 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins /docs/en/package-information/98ASB16718C.pdf documents 302435339416912908 Package Information N en None D pdf J N N 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins 43.5 KB SOT1793-1 N E1003176922206 /docs/en/package-information/98ASB15607C.pdf 2016-10-31 U1003176831092 PSP 3 Mar 22, 2016 Package Information NI-780 None /docs/en/package-information/98ASB15607C.pdf English documents 44100 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASB15607C.pdf 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins /docs/en/package-information/98ASB15607C.pdf documents 302435339416912908 Package Information N en None D pdf H N N 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins 44.1 KB SOT1792-1 N U1003176831092 true Y Products

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