2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

MRF7S21110H
The MRF7S21110HR3 and MRF7S21110HSR3 are designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

製品画像を見る

製品詳細

Features

  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 33 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    Power Gain: 17.3 dB
    Drain Efficiency: 32.5%
    Device Output Signal PAR:  6.1 dB @ 0.01% Probability on CCDF
    ACPR @ 5 MHz Offset: –38 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW Peak Tuned Output Power
  • Pout @ 1 dB Compression Point ≥ 110 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel

ドキュメント

クイック・リファレンス ドキュメンテーションの種類.

フィルタ

3 ドキュメント

デザイン・ファイル

クイック・リファレンス 設計・ファイルの種類.
フィルタ

4 設計・ファイル

サポート

お困りのことは何ですか？?

  • Narrow your search
検索