A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V | NXP Semiconductors

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2300-2400 MHz, 80 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G23H500W17S
生産終了 (EOL)

The A3G23H500W17S 80 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2300 to 2400 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

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Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHS compliant

RF Performance Table

2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = -5.0 Vdc, Pout = 80 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
 
Frequency Gps
(dB) 		ηD
(%) 		Output PAR
(dB) 		ACPR
(dBc)
2300 MHz 14.5 53.7 8.4 -30.5
2350 MHz 14.6 52.8 8.3 -30.6
2400 MHz 14.2 53.2 8.1 -31.9

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N true 0 PSPA3G23H500W17Sja 3 アプリケーション・ノート Application Note t789 2 データ・シート Data Sheet t520 1 ja ja ja データ・シート Data Sheet 1 1 1 English A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations. 1620168821469690062224 PSP 367.4 KB None None documents None 1620168821469690062224 /docs/en/data-sheet/A3G23H500W17S.pdf 367381 /docs/en/data-sheet/A3G23H500W17S.pdf A3G23H500W17S documents N N 2021-05-04 A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3G23H500W17S.pdf /docs/en/data-sheet/A3G23H500W17S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en May 3, 2021 980000996212993340 Data Sheet Y N A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet アプリケーション・ノート Application Note 2 2 2 English This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. 1075398872032723970051 PSP 235.5 KB None None documents None 1075398872032723970051 /docs/en/application-note/AN1955.pdf 235468 /docs/en/application-note/AN1955.pdf AN1955 documents N N 2016-11-09 Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf /docs/en/application-note/AN1955.pdf Application Note N 645036621402383989 2025-01-28 pdf N en Jul 11, 2024 645036621402383989 Application Note Y N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 3 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages false 0 A3G23H500W17S downloads ja true 1 Y PSP Y Y アプリケーション・ノート 2 /docs/en/application-note/AN1955.pdf 2016-11-09 1075398872032723970051 PSP 2 Jul 11, 2024 Application Note This document explains the methodology used by NXP for thermal characterization of RF high power amplifier products, which include LDMOS and GaN active devices. None /docs/en/application-note/AN1955.pdf English documents 235468 None 645036621402383989 2025-01-28 N /docs/en/application-note/AN1955.pdf Thermal Characterization Methodology of RF Power Amplifiers - Application Note /docs/en/application-note/AN1955.pdf documents 645036621402383989 Application Note N en None Y pdf 2 N N Thermal Characterization Methodology of RF Power Amplifiers - Application Note 235.5 KB AN1955 N 1075398872032723970051 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 3 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 データ・シート 1 /docs/en/data-sheet/A3G23H500W17S.pdf 2021-05-04 1620168821469690062224 PSP 1 May 3, 2021 Data Sheet A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Airfast<sup>&reg;</sup> RF power GaN transistor for cellular base stations. None /docs/en/data-sheet/A3G23H500W17S.pdf English documents 367381 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3G23H500W17S.pdf A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet /docs/en/data-sheet/A3G23H500W17S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 1 N N A3G23H500W17S 2300-2400 MHz, 80 W Avg, 48 V Data Sheet 367.4 KB A3G23H500W17S N 1620168821469690062224 true Y Products

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