アプリケーション・ノート (1)
データ・シート (1)
-
A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V GaN Data Sheet[A2G26H281-04S]
パッケージ情報 (1)
-
NI-780S-4L[98ASA10718D]
2496-2690 MHz, 50 W Avg., 48 V Airfast® RF Power GaN Transistor
The A2G26H281-04S 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.
This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.
NI-780S-4L Package Image
製品詳細
Features
- High terminal impedances for optimal broadband performance
- Advanced high performance in-package Doherty
- Able to withstand extremely high output VSWR and broadband operating conditions
- RoHS compliant
RF Performance Table
2600 MHz
Typical Doherty single-carrier W-CDMA characterization performance: VDD = 48 Vdc, IDQA = 150 mA, VGSB = –5.4 Vdc, Pout = 50 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2575 MHz | 14.3 | 61.9 | 7.2 | –29.1 |
| 2605 MHz | 14.3 | 61.7 | 7.1 | –29.5 |
| 2635 MHz | 14.3 | 60.9 | 6.8 | –30.4 |
購入/パラメータ
| | | | | |
|---|---|---|---|---|---|
| | | | | |
| | | | | |
| | | | | |
| | | | | |
| | | | | |
| | | | | |
| | | | | |
| | | | | |
| | | | | |
| | | | | |
ドキュメント
クイック・リファレンス ドキュメンテーションの種類.
3 ドキュメント
コンパクトリスト
3 ドキュメント
コンパクトリスト
アプリケーション・ノート (1)
データ・シート (1)
-
A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V GaN Data Sheet[A2G26H281-04S]
パッケージ情報 (1)
-
NI-780S-4L[98ASA10718D]
設計・リソース
サポート
最近閲覧した商品
There are no recently viewed products to display.
閲覧履歴を表示または編集する