This A3V07H600-42N 112 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 616 to 870 MHz.
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 900 mA, VGSB = VGSC = 1.0 Vdc(1), Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(2)
| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 717 MHz | 16.9 | 52.8 | 8.0 | –30.7 |
| 742 MHz | 17.0 | 51.3 | 8.1 | –32.0 |
| 768 MHz | 17.1 | 51.8 | 7.7 | –32.4 |
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 900 mA, VGSB = VGSC = 1.1 Vdc(1), Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 616 MHz | 18.2 | 45.4 | 7.7 | –32.4 |
| 632 MHz | 18.5 | 47.1 | 7.7 | –31.9 |
| 650 MHz | 18.7 | 47.7 | 7.8 | –31.0 |
| 717 MHz | 19.1 | 44.4 | 8.3 | –36.2 |
| 732 MHz | 19.1 | 43.4 | 8.5 | –38.3 |
| 750 MHz | 19.2 | 42.9 | 8.5 | –39.5 |
| 840 MHz | 19.1 | 44.9 | 8.1 | –33.3 |
| 850 MHz | 18.7 | 43.9 | 8.1 | –32.7 |
| 860 MHz | 18.4 | 42.8 | 8.0 | –32.6 |
| 870 MHz | 18.0 | 41.7 | 7.8 | –32.4 |
1. VGSB = VGSC = peaking bias voltage. 2. All data measured in fixture with device soldered to heatsink. 3. Fixture designed with a wideband match.
|
|
|
|
|
|
|
|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
4 設計・ファイル
完全な内訳を受け取ります。 製品の設置面積などについては、 eCad ファイル.