デザイン・ファイル
完全な内訳を受け取ります。 製品の設置面積などについては、 eCad ファイル.
1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor
- このページでは、新規設計を推奨しない製品に関する情報を掲載しています。
This high ruggedness device, MMRF1316NR1, is designed for use in high VSWR military, aerospace and defense, radar and radio communications applications. It is an unmatched input and output design allowing wide frequency range utilization, between 1.8 and 600 MHz.
RF_ISO_TO_270WB_4 graphic image
製品詳細
Features
- Wide Operating Frequency Range
- Ruggedness
- Input and Output Allowing Wide Frequency Range Utilization
- Integrated Stability Enhancements
- Low Thermal Resistance
- Integrated ESD Protection Circuitry
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.
RF Performance Tables
87.5-108 MHz Broadband
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 87.5-108(1,3) | CW | 361 | 23.8 | 80.1 |
230 MHz Narrowband
VDD = 50 Vdc| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 230(2) | CW | 300 | 25.0 | 70.0 |
| 230(2) | Pulse (100 µsec, 20% Duty Cycle) | 300 Peak | 27.0 | 71.0 |
Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 98(1) | CW | > 65:1 at all Phase Angles | 3 (3 dB Overdrive) | 50 | No Device Degradation |
| 230(2) | Pulse (100 µsec, 20% Duty Cycle) | 1.16 Peak (3 dB Overdrive) |
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.
購入/パラメータ
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ドキュメント
クイック・リファレンス ドキュメンテーションの種類.
