New Linear Power Amplifier from NXP Provides Flexibility for Thermally Sensitive Designs

  • 2016年2月18日
  • 11:43 AM EST
  • 投稿者 NXP Semiconductors
  • プレス・リリース

NXP Semiconductors today introducedthe MMZ25332B4 InGaP HBT linear amplifier. The device is housed in a 4 mm x 4mm QFN package that can be used on thicker printed circuit boards (PCB),particularly where thermal sensitivity is high. The MMZ25332B4 is a 2 W,two-stage, wideband linear amplifier designed for small cell, W-CDMA and LTE basestation applications. It operates at 1500 – 2700 MHz from a supply voltage of3-5 volts.

Since thedevice has partial internal matching, customers can reduce external matchingcomponents in their designs. Bias current may be adjusted by varying the valuesof the external bias resistors. The device also provides exceptional linearity,with a typical output power performance in LTE mode of 22.5 dBm with adjacentchannel leakage ratio of -48 dBc.

TheMMZ25332B4 can handle an RF input overdrive up to 30 dBm and has a human bodymodel ESD rating of Class 2.

Application design tools available

 

To accelerate new designdevelopment, application tools are available for a range of applicationfrequencies and include full characterization and design information in anevaluation kit. A .dxf file may be downloaded from NXP’s web for a printedcircuit board design. www.nxp.com/MMZ25332B4.

 

Availability

The MMZ25332B4 is in production and available throughNXP or one of its distribution partners. Evaluation kits and other supporttools are available now upon request. For pricing information, please contact alocal NXP sales office or an authorized distributor. For more information,visit www.nxp.com/MMZ25332B4

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