A3T21H456W23S 製品情報|NXP

購入オプション

操作機能

パラメータ
fi(RF) [max] (MHz)
2200
Number of pins
6
Package Style
CFM
Amp Class
AB, C
Test Signal
WCDMA
Supply Voltage (Typ) (V)
30
Class
AB, C
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
0.14
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
2110, 2200
Efficiency (Typ) (%)
49.5
Peak Power (Typ) (W)
562
Frequency Band (Hz)
2110000000, 2200000000
パラメータ
Description
Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V
fi(RF) [min] (MHz)
2110
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
87 @ AVG
Gain (Typ) (dB)
14.8
Power Gain (Typ) (dB) @ f (MHz)
14.8 @ 2110
Frequency (Max) (MHz)
2200
Frequency (Min) (MHz)
2110
Frequency (Min-Max) (GHz)
2.1100001 to 2.2
frange [max] (MHz)
2200
frange [min] (MHz)
2110
Rth(j-a) (K/W)
0.14
Matching
input and output impedance matching
Modes of Operation
wideband code division multiple access
Peak Power (Typ) (dBm)
57.5

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
A3T21H456W23SR6(935371527128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e4
REACH SVHC
6240.148

品質

Part/12NC安全保障機能安全Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ
A3T21H456W23SR6
(935371527128)
No
260
40

配送

Part/12NC関税分類番号(米国)免責事項:輸出規制品目番号(米国)
A3T21H456W23SR6
(935371527128)
854233
EAR99

製品変更のお知らせ

Part/12NC発行日有効期限PCNタイトル
A3T21H456W23SR6
(935371527128)
2025-04-162025-05-26202504006IFreescale Logo to NXP Logo Product Marking Conversion for All Remaining Former Freescale Products

詳細 A3T21H456W23S

The A3T21H456W23S 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2110 to 2200 MHz.