AFT27S010N 製品情報|NXP

特徴


Airfast RF Power LDMOS Transistor, 728-3600 MHz, 1.26 W Avg., 28 V

パッケージ


PLD4L: PLD4L, plastic, RF over-molded package designation; 4 terminals; 0 mm pitch; 5.85 mm x 6.61 mm x 1.74 mm body

購入オプション

AFT27S010NT1

生産終了 (EOL)

12NC: 935317972515

詳細

注文

操作機能

パラメータ
fi(RF) [max] (MHz)
3600
Number of pins
4
Amp Class
AB
Test Signal
WCDMA
Supply Voltage (Typ) (V)
28
Class
AB
Die Technology
LDMOS
Thermal Resistance (Spec) (℃/W)
3.5
P1dB (Typ) (dBm)
40
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
100, 3600
Efficiency (Typ) (%)
22.6
Frequency Band (Hz)
100000000, 3600000000
Description
Airfast RF Power LDMOS Transistor, 728-3600 MHz, 1.26 W Avg., 28 V
パラメータ
fi(RF) [min] (MHz)
100
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
1.26 @ AVG
P1dB (Typ) (W)
10
Gain (Typ) (dB)
21.7
Power Gain (Typ) (dB) @ f (MHz)
21.7 @ 2170
Frequency (Max) (MHz)
3600
Frequency (Min) (MHz)
100
Frequency (Min-Max) (GHz)
0.1 to 3.6000001
frange [max] (MHz)
3600
frange [min] (MHz)
100
Rth(j-a) (K/W)
3.5
Matching
unmatched
Modes of Operation
wideband code division multiple access

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
AFT27S010NT1(935317972515)
No
Yes
Certificate Of Analysis (CoA)
Yes
H
e3
REACH SVHC
280.0

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛はんだ鉛はんだ鉛フリーはんだ鉛はんだ鉛フリーはんだ
AFT27S010NT1
(935317972515)
No
3
260
260
40
40

配送

Part/12NC関税分類番号(米国)免責事項:
AFT27S010NT1
(935317972515)
854129

製品変更のお知らせ

Part/12NC発行日有効期限PCNタイトル
AFT27S010NT1
(935317972515)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label
AFT27S010NT1
(935317972515)
2017-12-202018-01-03201710023INew PQ Label Input for Non-MPQ Shipments

詳細 AFT27S010N

The AFT27S010NT1 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 100 to 3600 MHz.