BGU8009 製品情報|NXP

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BGU8009,115

生産終了 (EOL)

12NC: 934066566115

詳細

注文

代理店からの注文

操作機能

パラメータ
@VCC (V)
1.8, 2.85
Supply Voltage (Max) (V)
3.1
Number of pins
6
Package Style
XSON
@f [max] (MHz)
1575
NF (dB)
0.65
@f [min] (MHz)
1575
NF (dB)
0.7
@f [max] (MHz)
1575
PL(1dB) (dBm)
-7, -10
PL(1dB) (dBm)
-7, -10
Security Status
COMPANY PUBLIC
PL(1dB) (dBm)
-7, -10
Supply Current (TYP) (mA)
4.4, 10
Description
SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass
Noise Figure (Typ) (dB)
0.7
Input 3rd Order Intercept (dBm)
3, 6
P1dB (dBm)
-7, -10
パラメータ
Supply Voltage (Min) (V)
1.5
Power Gain (dB) @ f (MHz)
17.8 @ 1575, 20 @ 1575
Supply Current (Typ) (μA)
4400, 10000
NF (dB)
0.7, 0.65
IP3i (dBm)
3.0, 6.0
NF @Gp= 5 dB (dB)
0.7
Gain (Typ) (dB) @ f (MHz)
17.8 @ 1575, 20 @ 1575
NF [typ] (dB)
0.7, 0.65
ICC [typ] (mA)
10
Gass (dB)
17.8, 20
Noise Figure (Typ) (dB) @ f (MHz)
0.65 @ 1575, 0.7 @ 1575
Gconv [typ] (dB)
17.8, 20
Gp (dB)
17.8, 20
Gp (dB)
17.8, 20
NXP_Gp [typ] (dB)
17.8, 20
Supply Voltage (Min-Max) (V)
1.5 to 3.1
@f
1.575, 1.575
Input 3rd Order Intercept (dBm)
3, 6

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーターREACH SVHCWeight (mg)
BGU8009,115(934066566115)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
1.3616836

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)
鉛はんだ鉛フリーはんだ鉛はんだ鉛フリーはんだ
BGU8009,115
(934066566115)
No
1
1
240
260

配送

Part/12NC関税分類番号(米国)免責事項:
BGU8009,115
(934066566115)
854233

詳細 BGU8009

The BGU8009 (also known as the GPS1201M) is a Low-Noise Amplifier (LNA) for GNSS receiver and LTE Band 32 down link applications, available in a small plastic 6-pin extremely thin leadless package. The BGU8009 requires one external matching inductor and one external decoupling capacitor.

The BGU8009 adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance when jamming signals from co-existing cellular transmitters are present. At low jamming power levels, it delivers 18 dB gain at a noise figure of 0.65 dB. During high jamming power levels, resulting for example from a cellular transmit burst, it temporarily increases its bias current to improve sensitivity.