MMDS25254H 製品情報|NXP

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MMDS25254HT1

生産終了 (EOL)

12NC: 935322101528

詳細

注文

操作機能

パラメータ
fi(RF) [max] (MHz)
2700
Number of pins
32
Package Style
HVQFN
Security Status
COMPANY PUBLIC
Frequency (Min-Max) (MHz)
2300, 2700
Frequency Band (Hz)
2300000000, 2700000000
Description
ADAM - Advanced Doherty Alignment Module, 2400-2800 MHz
パラメータ
fi(RF) [min] (MHz)
2300
Frequency (Max) (MHz)
2700
Frequency (Min) (MHz)
2300
Frequency (Min-Max) (GHz)
2.3 to 2.7
frange [max] (MHz)
2700
frange [min] (MHz)
2300

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーター2次インターコネクトREACH SVHCWeight (mg)
MMDS25254HT1(935322101528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
D
e3
REACH SVHC
110.6

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ鉛フリーはんだ
MMDS25254HT1
(935322101528)
No
3
260
40

配送

Part/12NC関税分類番号(米国)免責事項:輸出規制品目番号(米国)
MMDS25254HT1
(935322101528)
854239
EAR99

製品変更のお知らせ

Part/12NC発行日有効期限PCNタイトル
MMDS25254HT1
(935322101528)
2020-12-152020-12-16202011011INXP Will Add a Sealed Date to the Product Label

詳細 MMDS25254H

The MMDS25254H is an advanced Doherty alignment module (ADAM), a new class of highly integrated GaAs MMIC control circuits designed specifically to optimize the performance of today's Doherty amplifiers. ADAM provides the ability to align and optimize the RF performance in the carrier and peaking paths of a Doherty amplifier thus providing improved overall BTS performance. When combined with Airfast® power transistors, this sophisticated technology provides increased manufacturing yields and power added efficiency. Available for frequency bands spanning 700 MHz to 2700 MHz.

Advantages:
  • Production yield improvement and tighter parametric distributions
  • Enables significant Doherty bandwidth improvement
  • Optimized performance over the entire cellular frequency band
  • Improved DPD correction with tighter performance distributions
  • Increased system efficiency (across entire frequency band)
  • Smaller output devices can be used, system efficiency is increased
  • Enables consistent asymmetric Doherty with different transistors (works with symmetric Doherty as well)
  • Field adjustment possible to optimize power amplifier performance under different conditions (power level, supply voltage, temperature)
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