A3G26H200W17S 製品情報|NXP

A3G26H200W17S

生産終了 (EOL)

A3G26H200W17S

生産終了 (EOL)

購入オプション

A3G26H200W17SR3

生産終了 (EOL)

12NC: 935397341128

詳細

注文

操作機能

パラメータ
Frequency (Min) (MHz)
2496
Frequency (Max) (MHz)
2690
Supply Voltage (Typ) (V)
48
パラメータ
Peak Power (Typ) (dBm)
52.5
Peak Power (Typ) (W)
178
Die Technology
GaN

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーターREACH SVHCWeight (mg)
A3G26H200W17SR3(935397341128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
3243.2

品質

Part/12NC安全保障機能安全Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ
A3G26H200W17SR3
(935397341128)
No
260
40

配送

Part/12NC関税分類番号(米国)免責事項:輸出規制品目番号(米国)
A3G26H200W17SR3
(935397341128)
854129
EAR99

詳細 A3G26H200W17S

The A3G26H200W17S 34 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.