A3G23H500W17S 製品情報|NXP

A3G23H500W17S

生産終了 (EOL)

A3G23H500W17S

生産終了 (EOL)

購入オプション

操作機能

パラメータ
Frequency (Min) (MHz)
2300
Frequency (Max) (MHz)
2400
Supply Voltage (Typ) (V)
48
パラメータ
Peak Power (Typ) (dBm)
57.8
Peak Power (Typ) (W)
603
Die Technology
GaN

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーターREACH SVHCWeight (mg)
A3G23H500W17SR3(935426992128)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
3243.2

品質

Part/12NC安全保障機能安全Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ
A3G23H500W17SR3
(935426992128)
No
260
40

配送

Part/12NC関税分類番号(米国)免責事項:輸出規制品目番号(米国)
A3G23H500W17SR3
(935426992128)
854233
EAR99

詳細 A3G23H500W17S

The A3G23H500W17S 80 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2300 to 2400 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2300 to 2400 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.