A5G26H605W19N 製品情報|NXP

A5G26H605W19N

アクティブ

A5G26H605W19N

アクティブ

購入オプション

操作機能

パラメータ
Frequency (Min) (MHz)
2496
Frequency (Max) (MHz)
2690
Supply Voltage (Typ) (V)
48
パラメータ
Peak Power (Typ) (dBm)
57.95
Peak Power (Typ) (W)
624
Die Technology
GaN

環境

Part/12NC鉛フリーEU RoHSハロゲンフリーRHFインジケーターREACH SVHCWeight (mg)
A5G26H605W19NR3(935461133528)
Yes
Yes
Certificate Of Analysis (CoA)
Yes
DREACH SVHC
3001.1

品質

Part/12NC安全保障機能安全吸湿感度レベル (MSL)Peak Package Body Temperature (PPT) (C°)Maximum Time at Peak Temperatures (s)
鉛フリーはんだ鉛フリーはんだ鉛フリーはんだ
A5G26H605W19NR3
(935461133528)
No
3
245
30

配送

Part/12NC関税分類番号(米国)免責事項:
A5G26H605W19NR3
(935461133528)
854233

詳細 A5G26H605W19N

This A5G26H605W19N 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.