A3T18H455W23S|1805-1880 MHz, 87 W Avg, 30 V | NXP Semiconductors

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1805-1880 MHz, 87 W Avg., 30 V Airfast® RF Power LDMOS Transistor

A3T18H455W23S
NRND
The A3T18H455W23S 87 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.

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Features

  • Advanced high performance in-package Doherty
  • Designed for wide instantaneous bandwidth applications
  • Greater negative gate-source voltage range for improved Class C operation
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • Designed for digital predistortion error correction systems
  • RoHS compliant

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 29.5 Vdc, IDQA = 590 mA, VGSB = 0.78 Vdc, Pout = 87 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
1805 MHz17.253.58.0–28.3
1840 MHz17.454.18.1–29.4
1880 MHz17.153.77.9–31.2

購入/パラメータ

1 結果

除外 1 NRND

パーツ

説明を表示

注文

コンピュータ支援設計 モデル

状況

Frequency (Min) (MHz)

Frequency (Max) (MHz)

Supply Voltage (Typ) (V)

Peak Power (Typ) (dBm)

Peak Power (Typ) (W)

ダイ技術

A3T18H455W23S
データ・シート

新規採用非推奨

1805

1880

30

58.4

685

LDMOS

N true 0 PSPA3T18H455W23Sja 4 アプリケーション・ノート Application Note t789 1 エンジニアリング・ブリテン Technical Notes t521 1 データ・シート Data Sheet t520 1 パッケージ情報 Package Information t790 1 ja ja ja データ・シート Data Sheet 1 1 0 English A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations 1504657624413714589583 PSP 511.1 KB None None documents None 1504657624413714589583 /docs/en/data-sheet/A3T18H455W23S.pdf 511105 /docs/en/data-sheet/A3T18H455W23S.pdf A3T18H455W23S documents N N 2017-09-05 A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Data Sheet /docs/en/data-sheet/A3T18H455W23S.pdf /docs/en/data-sheet/A3T18H455W23S.pdf Data Sheet N 980000996212993340 2022-12-07 pdf N en Sep 1, 2017 980000996212993340 Data Sheet Y N A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Data Sheet アプリケーション・ノート Application Note 1 2 1 English The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). S989356392744 PSP 664.6 KB None None documents None S989356392744 /docs/en/application-note/AN1908.pdf 664592 /docs/en/application-note/AN1908.pdf AN1908 documents N N 2016-10-31 AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf /docs/en/application-note/AN1908.pdf Application Note N 645036621402383989 2024-03-13 pdf N en Feb 24, 2011 645036621402383989 Application Note Y N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages エンジニアリング・ブリテン Technical Notes 1 3 0 English This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. 1074535848819727693421 PSP 171.0 KB None None documents None 1074535848819727693421 /docs/en/engineering-bulletin/EB212.pdf 170979 /docs/en/engineering-bulletin/EB212.pdf EB212 documents N N 2016-11-09 Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf /docs/en/engineering-bulletin/EB212.pdf Technical Notes N 389245547230346745 2024-09-13 pdf N en Jan 19, 2004 389245547230346745 Technical Notes Y N Using Data Sheet Impedances for RF LDMOS Devices パッケージ情報 Package Information 1 4 A English ACP-1230S-4L2S 1497055960367704905016 PSP 73.9 KB None None documents None 1497055960367704905016 /docs/en/package-information/98ASA00974D.pdf 73913 /docs/en/package-information/98ASA00974D.pdf SOT1800-4 documents N N 2017-06-09 98ASA00974D, ACP-1230S-4L2S /docs/en/package-information/98ASA00974D.pdf /docs/en/package-information/98ASA00974D.pdf Package Information N 302435339416912908 2022-12-07 pdf N en Jun 21, 2017 302435339416912908 Package Information D N 98ASA00974D, ACP-1230S-4L2S false 0 A3T18H455W23S downloads ja true 1 Y PSP アプリケーション・ノート 1 /docs/en/application-note/AN1908.pdf 2016-10-31 S989356392744 PSP 2 Feb 24, 2011 Application Note The purpose of this application note is to provide NXP Semiconductors customers with a guideline for solder reflow mounting of high power RF transistors and integrated circuits in Air Cavity Packages (ACP). None /docs/en/application-note/AN1908.pdf English documents 664592 None 645036621402383989 2024-03-13 N /docs/en/application-note/AN1908.pdf AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages /docs/en/application-note/AN1908.pdf documents 645036621402383989 Application Note N en None Y pdf 1 N N AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages 664.6 KB AN1908 N S989356392744 エンジニアリング・ブリテン 1 /docs/en/engineering-bulletin/EB212.pdf 2016-11-09 1074535848819727693421 PSP 3 Jan 19, 2004 Technical Notes This document explains the format used by NXP<sup>&#174;</sup> for presenting LDMOS impedance information for both single-ended and push-pull devices on RF Power datasheets. None /docs/en/engineering-bulletin/EB212.pdf English documents 170979 None 389245547230346745 2024-09-13 N /docs/en/engineering-bulletin/EB212.pdf Using Data Sheet Impedances for RF LDMOS Devices /docs/en/engineering-bulletin/EB212.pdf documents 389245547230346745 Technical Notes N en None Y pdf 0 N N Using Data Sheet Impedances for RF LDMOS Devices 171.0 KB EB212 N 1074535848819727693421 データ・シート 1 /docs/en/data-sheet/A3T18H455W23S.pdf 2017-09-05 1504657624413714589583 PSP 1 Sep 1, 2017 Data Sheet A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Airfast<sup>&reg;</sup> RF power LDMOS transistor for cellular base stations None /docs/en/data-sheet/A3T18H455W23S.pdf English documents 511105 None 980000996212993340 2022-12-07 N /docs/en/data-sheet/A3T18H455W23S.pdf A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Data Sheet /docs/en/data-sheet/A3T18H455W23S.pdf documents 980000996212993340 Data Sheet N en None Y pdf 0 N N A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Data Sheet 511.1 KB A3T18H455W23S N 1504657624413714589583 パッケージ情報 1 /docs/en/package-information/98ASA00974D.pdf 2017-06-09 1497055960367704905016 PSP 4 Jun 21, 2017 Package Information ACP-1230S-4L2S None /docs/en/package-information/98ASA00974D.pdf English documents 73913 None 302435339416912908 2022-12-07 N /docs/en/package-information/98ASA00974D.pdf 98ASA00974D, ACP-1230S-4L2S /docs/en/package-information/98ASA00974D.pdf documents 302435339416912908 Package Information N en None D pdf A N N 98ASA00974D, ACP-1230S-4L2S 73.9 KB SOT1800-4 N 1497055960367704905016 true Y Products

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